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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4904DY-T1-E3 SI4904DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 8A 8-SOIC
SI4904DY-T1-E3 SI4904DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 8A 8-SOIC
SI6913DQ-T1-GE3 SI6913DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.9A 8-TSSOP
SI6913DQ-T1-GE3 SI6913DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.9A 8-TSSOP
SI6913DQ-T1-GE3 SI6913DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.9A 8-TSSOP
SI7942DP-T1-GE3 SI7942DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 3.8A PPAK SO-8
SI7942DP-T1-GE3 SI7942DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 3.8A PPAK SO-8
SI7942DP-T1-GE3 SI7942DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 3.8A PPAK SO-8
SI4288DY-T1-GE3 SI4288DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 9.2A 8SO
SI4288DY-T1-GE3 SI4288DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 9.2A 8SO
SI4288DY-T1-GE3 SI4288DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 9.2A 8SO
SI7956DP-T1-GE3 SI7956DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7956DP-T1-GE3 SI7956DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7956DP-T1-GE3 SI7956DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7994DP-T1-GE3 SI7994DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 60A PPAK SO-8
SI7994DP-T1-GE3 SI7994DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 60A PPAK SO-8
SI7994DP-T1-GE3 SI7994DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 60A PPAK SO-8
SI4904DY-T1-GE3 SI4904DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 8A 8-SOIC
SI4904DY-T1-GE3 SI4904DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 8A 8-SOIC
SI4904DY-T1-GE3 SI4904DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 8A 8-SOIC
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