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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
FDC6401N FDC6401N Fairchild Semiconductor MOSFET 2N-CH 20V 3A SSOT-6
FDC6401N FDC6401N Fairchild Semiconductor MOSFET 2N-CH 20V 3A SSOT-6
FDC6333C FDC6333C Fairchild Semiconductor MOSFET N/P-CH 30V 2.5A/2A SSOT6
FDC6333C FDC6333C Fairchild Semiconductor MOSFET N/P-CH 30V 2.5A/2A SSOT6
FDC6333C FDC6333C Fairchild Semiconductor MOSFET N/P-CH 30V 2.5A/2A SSOT6
FDC6327C FDC6327C Fairchild Semiconductor MOSFET N/P-CH 20V SSOT-6
FDC6327C FDC6327C Fairchild Semiconductor MOSFET N/P-CH 20V SSOT-6
FDC6327C FDC6327C Fairchild Semiconductor MOSFET N/P-CH 20V SSOT-6
NDC7001C NDC7001C Fairchild Semiconductor MOSFET N/P-CH 60V SSOT6
NDC7001C NDC7001C Fairchild Semiconductor MOSFET N/P-CH 60V SSOT6
NDC7001C NDC7001C Fairchild Semiconductor MOSFET N/P-CH 60V SSOT6
FDC6561AN FDC6561AN Fairchild Semiconductor MOSFET 2N-CH 30V 2.5A SSOT6
FDC6561AN FDC6561AN Fairchild Semiconductor MOSFET 2N-CH 30V 2.5A SSOT6
FDC6561AN FDC6561AN Fairchild Semiconductor MOSFET 2N-CH 30V 2.5A SSOT6
FDC6506P FDC6506P Fairchild Semiconductor MOSFET 2P-CH 30V 1.8A SSOT6
FDC6506P FDC6506P Fairchild Semiconductor MOSFET 2P-CH 30V 1.8A SSOT6
FDC6506P FDC6506P Fairchild Semiconductor MOSFET 2P-CH 30V 1.8A SSOT6
FDC6420C FDC6420C Fairchild Semiconductor MOSFET N/P-CH 20V 3A/2.2A SSOT-6
FDC6420C FDC6420C Fairchild Semiconductor MOSFET N/P-CH 20V 3A/2.2A SSOT-6
FDC6420C FDC6420C Fairchild Semiconductor MOSFET N/P-CH 20V 3A/2.2A SSOT-6
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