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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXMP3A16DN8TA ZXMP3A16DN8TA Diodes Incorporated MOSFET 2P-CH 30V 4.2A 8-SOIC
ZXMP3A16DN8TA ZXMP3A16DN8TA Diodes Incorporated MOSFET 2P-CH 30V 4.2A 8-SOIC
ZXMP6A16DN8QTA ZXMP6A16DN8QTA Diodes Incorporated MOSFET 2P-CH 60V 2.9A 8-SOIC
ZXMP6A16DN8QTA ZXMP6A16DN8QTA Diodes Incorporated MOSFET 2P-CH 60V 2.9A 8-SOIC
ZXMP6A16DN8QTA ZXMP6A16DN8QTA Diodes Incorporated MOSFET 2P-CH 60V 2.9A 8-SOIC
ZXMC3F31DN8TA ZXMC3F31DN8TA Diodes Incorporated MOSFET N/P-CH 30V 6.8A/4.9A 8SO
ZXMC3F31DN8TA ZXMC3F31DN8TA Diodes Incorporated MOSFET N/P-CH 30V 6.8A/4.9A 8SO
ZXMC3F31DN8TA ZXMC3F31DN8TA Diodes Incorporated MOSFET N/P-CH 30V 6.8A/4.9A 8SO
ZXMC3AM832TA ZXMC3AM832TA Diodes Incorporated MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
ZXMC3AM832TA ZXMC3AM832TA Diodes Incorporated MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
ZXMC3AM832TA ZXMC3AM832TA Diodes Incorporated MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
DI9942T DI9942T Diodes Incorporated MOSFET N/P-CH 20V 2.5A 8-SOIC
DI9952T DI9952T Diodes Incorporated MOSFET N/P-CH 30V 2.9A 8-SOIC
DMG6968UDM-7 DMG6968UDM-7 Diodes Incorporated MOSFET 2N-CH 20V 6.5A SOT-26
DMG6968UDM-7 DMG6968UDM-7 Diodes Incorporated MOSFET 2N-CH 20V 6.5A SOT-26
DMG6968UDM-7 DMG6968UDM-7 Diodes Incorporated MOSFET 2N-CH 20V 6.5A SOT-26
DMN2215UDM-7 DMN2215UDM-7 Diodes Incorporated MOSFET 2N-CH 20V 2A SOT-26
DMN2215UDM-7 DMN2215UDM-7 Diodes Incorporated MOSFET 2N-CH 20V 2A SOT-26
DMN2215UDM-7 DMN2215UDM-7 Diodes Incorporated MOSFET 2N-CH 20V 2A SOT-26
ZXMHC6A07N8TC ZXMHC6A07N8TC Diodes Incorporated MOSFET 2N/2P-CH 60V 8-SOIC
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