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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXMD63C02XTC ZXMD63C02XTC Diodes Incorporated MOSFET N/P-CH 20V 8MSOP
ZXMD63C03XTC ZXMD63C03XTC Diodes Incorporated MOSFET N/P-CH 30V 8MSOP
ZXMD63N02XTC ZXMD63N02XTC Diodes Incorporated MOSFET 2N-CH 20V 2.5A 8MSOP
ZXMD63N03XTC ZXMD63N03XTC Diodes Incorporated MOSFET 2N-CH 30V 2.3A 8MSOP
ZXMD63P02XTC ZXMD63P02XTC Diodes Incorporated MOSFET 2P-CH 20V 8MSOP
ZXMD63P03XTC ZXMD63P03XTC Diodes Incorporated MOSFET 2P-CH 30V 8MSOP
ZXMD65P02N8TC ZXMD65P02N8TC Diodes Incorporated MOSFET 2P-CH 20V 4A 8SOIC
ZXMN10A08DN8TC ZXMN10A08DN8TC Diodes Incorporated MOSFET 2N-CH 100V 1.6A 8SOIC
ZXMN2A04DN8TC ZXMN2A04DN8TC Diodes Incorporated MOSFET 2N-CH 20V 5.9A 8SOIC
ZXMN3A04DN8TC ZXMN3A04DN8TC Diodes Incorporated MOSFET 2N-CH 30V 6.5A 8SOIC
ZXMN3A06DN8TC ZXMN3A06DN8TC Diodes Incorporated MOSFET 2N-CH 30V 4.9A 8SOIC
ZXMN3A06N8TA ZXMN3A06N8TA Diodes Incorporated MOSFET 2N-CH 30V 8SOIC
ZXMN6A09DN8TC ZXMN6A09DN8TC Diodes Incorporated MOSFET 2N-CH 60V 4.3A 8SOIC
ZXMN6A11DN8TC ZXMN6A11DN8TC Diodes Incorporated MOSFET 2N-CH 60V 2.5A 8SOIC
DMN5L06DW-7 DMN5L06DW-7 Diodes Incorporated MOSFET 2N-CH 50V 0.28A SOT-363
DMN5L06DW-7 DMN5L06DW-7 Diodes Incorporated MOSFET 2N-CH 50V 0.28A SOT-363
DMN5L06DW-7 DMN5L06DW-7 Diodes Incorporated MOSFET 2N-CH 50V 0.28A SOT-363
DMN5L06VAK-7 DMN5L06VAK-7 Diodes Incorporated MOSFET 2N-CH 50V 0.28A SOT-563
DMN5L06VAK-7 DMN5L06VAK-7 Diodes Incorporated MOSFET 2N-CH 50V 0.28A SOT-563
DMC3018LSD-13 DMC3018LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 9.1A/6A 8-SOIC
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