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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMC3400SDW-13 DMC3400SDW-13 Diodes Incorporated MOSFET N/P-CH 30V SOT363
DMP2200UDW-13 DMP2200UDW-13 Diodes Incorporated MOSFET 2P-CH 20V 0.9A SOT363
DMG6301UDW-13 DMG6301UDW-13 Diodes Incorporated MOSFET 2N-CH 25V 0.24A SOT363
DMN32D4SDW-13 DMN32D4SDW-13 Diodes Incorporated MOSFET 2N-CH 30V 0.65A SOT363
DMN63D8LDWQ-7 DMN63D8LDWQ-7 Diodes Incorporated MOSFET 2N-CH 30V 0.22A SOT363
DMN63D8LDWQ-7 DMN63D8LDWQ-7 Diodes Incorporated MOSFET 2N-CH 30V 0.22A SOT363
DMN63D8LDWQ-7 DMN63D8LDWQ-7 Diodes Incorporated MOSFET 2N-CH 30V 0.22A SOT363
DMN65D8LDWQ-13 DMN65D8LDWQ-13 Diodes Incorporated MOSFET 2N-CH 60V 180MA SOT363
DMN33D8LDW-7 DMN33D8LDW-7 Diodes Incorporated MOSFET 2N-CH 30V 0.25A
DMN65D8LDWQ-7 DMN65D8LDWQ-7 Diodes Incorporated MOSFET 2N-CH 60V 180MA SOT363
DMN32D2LDF-7 DMN32D2LDF-7 Diodes Incorporated MOSFET 2N-CH 30V 0.4A SOT353
DMN32D2LDF-7 DMN32D2LDF-7 Diodes Incorporated MOSFET 2N-CH 30V 0.4A SOT353
DMN32D2LDF-7 DMN32D2LDF-7 Diodes Incorporated MOSFET 2N-CH 30V 0.4A SOT353
2N7002VAC-7 2N7002VAC-7 Diodes Incorporated MOSFET 2N-CH 60V 0.28A SOT-563
DMN1029UFDB-13 DMN1029UFDB-13 Diodes Incorporated MOSFET 2N-CH 12V 5.6A 6UDFN
DMP1046UFDB-13 DMP1046UFDB-13 Diodes Incorporated MOSFET 2P-CH 12V 3.8A 6UDFN
DMC31D5UDJ-7 DMC31D5UDJ-7 Diodes Incorporated MOSFET N/P-CH 30V .22A SOT963
DMC25D0UVT-13 DMC25D0UVT-13 Diodes Incorporated MOSFET N/P-CH 30V TSOT26
DMC25D1UVT-13 DMC25D1UVT-13 Diodes Incorporated MOSFET N/P-CH 30V TSOT26
DMP2004DWK-7 DMP2004DWK-7 Diodes Incorporated MOSFET 2P-CH 20V 0.43A SOT-363
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