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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN5010VAK-7 DMN5010VAK-7 Diodes Incorporated MOSFET 2N-CH 50V 0.28A SOT-563
DMN5010VAK-7 DMN5010VAK-7 Diodes Incorporated MOSFET 2N-CH 50V 0.28A SOT-563
DMC3026LSD-13 DMC3026LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 6.5A/6.2A 8SO
DMC3026LSD-13 DMC3026LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 6.5A/6.2A 8SO
DMC3026LSD-13 DMC3026LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 6.5A/6.2A 8SO
DMN2050LFDB-13 DMN2050LFDB-13 Diodes Incorporated MOSFET 2N-CH 20V 3.3A 6UDFN
DMN2050LFDB-13 DMN2050LFDB-13 Diodes Incorporated MOSFET 2N-CH 20V 3.3A 6UDFN
DMN2050LFDB-13 DMN2050LFDB-13 Diodes Incorporated MOSFET 2N-CH 20V 3.3A 6UDFN
DMN2050LFDB-7 DMN2050LFDB-7 Diodes Incorporated MOSFET 2N-CH 20V 3.3A 6UDFN
DMN2050LFDB-7 DMN2050LFDB-7 Diodes Incorporated MOSFET 2N-CH 20V 3.3A 6UDFN
DMN2050LFDB-7 DMN2050LFDB-7 Diodes Incorporated MOSFET 2N-CH 20V 3.3A 6UDFN
DMC3016LSD-13 DMC3016LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 8.2A/6.2A 8SO
DMC3016LSD-13 DMC3016LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 8.2A/6.2A 8SO
DMC3016LSD-13 DMC3016LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 8.2A/6.2A 8SO
DMN2023UCB4-7 DMN2023UCB4-7 Diodes Incorporated MOSFET 2N-CH X1-WLB1818-4
DMN2023UCB4-7 DMN2023UCB4-7 Diodes Incorporated MOSFET 2N-CH X1-WLB1818-4
DMN2023UCB4-7 DMN2023UCB4-7 Diodes Incorporated MOSFET 2N-CH X1-WLB1818-4
DMP3098LSD-13 DMP3098LSD-13 Diodes Incorporated MOSFET 2P-CH 30V 4.4A 8-SOIC
DMP3098LSD-13 DMP3098LSD-13 Diodes Incorporated MOSFET 2P-CH 30V 4.4A 8-SOIC
DMP3098LSD-13 DMP3098LSD-13 Diodes Incorporated MOSFET 2P-CH 30V 4.4A 8-SOIC
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