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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXMP3A17DN8TA ZXMP3A17DN8TA Diodes Incorporated MOSFET 2P-CH 30V 3.4A 8-SOIC
ZXMP3A17DN8TA ZXMP3A17DN8TA Diodes Incorporated MOSFET 2P-CH 30V 3.4A 8-SOIC
ZXMP3A17DN8TA ZXMP3A17DN8TA Diodes Incorporated MOSFET 2P-CH 30V 3.4A 8-SOIC
ZDM4306NTA ZDM4306NTA Diodes Incorporated MOSFET 2N-CH 60V 2A SOT-223-8
ZDM4306NTC ZDM4306NTC Diodes Incorporated MOSFET 2N-CH 60V 2A SOT-223-8
ZDM4306NTA ZDM4306NTA Diodes Incorporated MOSFET 2N-CH 60V 2A SOT-223-8
ZDM4306NTA ZDM4306NTA Diodes Incorporated MOSFET 2N-CH 60V 2A SOT-223-8
DMHC10H170SFJ-13 DMHC10H170SFJ-13 Diodes Incorporated MOSFET 2N/2P-CH 100V DFN5045-12
DMHC10H170SFJ-13 DMHC10H170SFJ-13 Diodes Incorporated MOSFET 2N/2P-CH 100V DFN5045-12
DMHC10H170SFJ-13 DMHC10H170SFJ-13 Diodes Incorporated MOSFET 2N/2P-CH 100V DFN5045-12
DMP4050SSDQ-13 DMP4050SSDQ-13 Diodes Incorporated MOSFET 2P-CH 40V 4A 8SO
DMP4050SSDQ-13 DMP4050SSDQ-13 Diodes Incorporated MOSFET 2P-CH 40V 4A 8SO
DMP4050SSDQ-13 DMP4050SSDQ-13 Diodes Incorporated MOSFET 2P-CH 40V 4A 8SO
HTMN5130SSD-13 HTMN5130SSD-13 Diodes Incorporated MOSFET 2N-CH 55V 2.6A 8SOIC
HTMN5130SSD-13 HTMN5130SSD-13 Diodes Incorporated MOSFET 2N-CH 55V 2.6A 8SOIC
HTMN5130SSD-13 HTMN5130SSD-13 Diodes Incorporated MOSFET 2N-CH 55V 2.6A 8SOIC
DMN63D8LDW-13 DMN63D8LDW-13 Diodes Incorporated MOSFET 2N-CH 30V 0.22A SOT363
DMN53D0LDW-13 DMN53D0LDW-13 Diodes Incorporated MOSFET 2N-CH 50V 0.36A SOT363
DMN33D8LDW-13 DMN33D8LDW-13 Diodes Incorporated MOSFET 2N-CH 30V 0.25A
DMC2400UV-13 DMC2400UV-13 Diodes Incorporated MOSFET N/P-CH 20V SOT563
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