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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXMN2088DE6TA ZXMN2088DE6TA Diodes Incorporated MOSFET 2N-CH 20V 1.7A SOT-26
DMC2041UFDB-13 DMC2041UFDB-13 Diodes Incorporated MOSFET N/P-CH 20V 6UDFN
DMN2041UFDB-13 DMN2041UFDB-13 Diodes Incorporated MOSFET 2N-CH 20V 4.7A 6UDFN
DMP2060UFDB-13 DMP2060UFDB-13 Diodes Incorporated MOSFET 2P-CH 20V 3.2A 6UDFN
DMG6898LSDQ-13 DMG6898LSDQ-13 Diodes Incorporated MOSFET 2N-CH 20V 9.5A 8SO
DMG6898LSDQ-13 DMG6898LSDQ-13 Diodes Incorporated MOSFET 2N-CH 20V 9.5A 8SO
DMG6898LSDQ-13 DMG6898LSDQ-13 Diodes Incorporated MOSFET 2N-CH 20V 9.5A 8SO
DMHC3025LSDQ-13 DMHC3025LSDQ-13 Diodes Incorporated MOSFET 2N/2P-CH 30V 8SOIC
DMHC3025LSDQ-13 DMHC3025LSDQ-13 Diodes Incorporated MOSFET 2N/2P-CH 30V 8SOIC
DMHC3025LSDQ-13 DMHC3025LSDQ-13 Diodes Incorporated MOSFET 2N/2P-CH 30V 8SOIC
ZXMC3A18DN8TA ZXMC3A18DN8TA Diodes Incorporated MOSFET N/P-CH 30V 8-SOIC
ZXMC3A18DN8TA ZXMC3A18DN8TA Diodes Incorporated MOSFET N/P-CH 30V 8-SOIC
ZXMC3A18DN8TA ZXMC3A18DN8TA Diodes Incorporated MOSFET N/P-CH 30V 8-SOIC
ZXMD65P03N8TA ZXMD65P03N8TA Diodes Incorporated MOSFET 2P-CH 30V 3.8A 8-SOIC
ZDM4206NTA ZDM4206NTA Diodes Incorporated MOSFET 2N-CH 60V 1A SOT-223-8
ZDM4206NTA ZDM4206NTA Diodes Incorporated MOSFET 2N-CH 60V 1A SOT-223-8
ZDM4206NTA ZDM4206NTA Diodes Incorporated MOSFET 2N-CH 60V 1A SOT-223-8
DI9945T DI9945T Diodes Incorporated MOSFET 2N-CH 60V 3.5A 8-SOIC
ZXMD63C02XTA ZXMD63C02XTA Diodes Incorporated MOSFET N/P-CH 20V 8-MSOP
ZXMD63C02XTA ZXMD63C02XTA Diodes Incorporated MOSFET N/P-CH 20V 8-MSOP
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