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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DI9956T DI9956T Diodes Incorporated MOSFET 2N-CH 30V 3.7A 8-SOIC
ZXMC4559DN8TC ZXMC4559DN8TC Diodes Incorporated MOSFET N/P-CH 60V 3.6A/2.6A 8SO
ZXMC4559DN8TC ZXMC4559DN8TC Diodes Incorporated MOSFET N/P-CH 60V 3.6A/2.6A 8SO
ZXMC4559DN8TC ZXMC4559DN8TC Diodes Incorporated MOSFET N/P-CH 60V 3.6A/2.6A 8SO
ZXMC3A16DN8TA ZXMC3A16DN8TA Diodes Incorporated MOSFET N/P-CH 30V 8SOIC
ZXMC3A16DN8TA ZXMC3A16DN8TA Diodes Incorporated MOSFET N/P-CH 30V 8SOIC
DMN3018SSD-13 DMN3018SSD-13 Diodes Incorporated MOSFET 2N-CH 30V 6.7A 8SO
DMN3018SSD-13 DMN3018SSD-13 Diodes Incorporated MOSFET 2N-CH 30V 6.7A 8SO
DMN3018SSD-13 DMN3018SSD-13 Diodes Incorporated MOSFET 2N-CH 30V 6.7A 8SO
DMHC4035LSD-13 DMHC4035LSD-13 Diodes Incorporated MOSFET 2N/2P-CH 40V 8-SOIC
DMHC4035LSD-13 DMHC4035LSD-13 Diodes Incorporated MOSFET 2N/2P-CH 40V 8-SOIC
DMHC4035LSD-13 DMHC4035LSD-13 Diodes Incorporated MOSFET 2N/2P-CH 40V 8-SOIC
DMN2019UTS-13 DMN2019UTS-13 Diodes Incorporated MOSFET 2N-CH 20V 5.4A TSSOP-8
DMN2019UTS-13 DMN2019UTS-13 Diodes Incorporated MOSFET 2N-CH 20V 5.4A TSSOP-8
DMN2019UTS-13 DMN2019UTS-13 Diodes Incorporated MOSFET 2N-CH 20V 5.4A TSSOP-8
ZXMN3A06DN8TA ZXMN3A06DN8TA Diodes Incorporated MOSFET 2N-CH 30V 4.9A 8-SOIC
ZXMN3A06DN8TA ZXMN3A06DN8TA Diodes Incorporated MOSFET 2N-CH 30V 4.9A 8-SOIC
ZXMC6A09DN8TA ZXMC6A09DN8TA Diodes Incorporated MOSFET N/P-CH 60V 8-SOIC
ZXMC6A09DN8TA ZXMC6A09DN8TA Diodes Incorporated MOSFET N/P-CH 60V 8-SOIC
ZXMC6A09DN8TA ZXMC6A09DN8TA Diodes Incorporated MOSFET N/P-CH 60V 8-SOIC
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