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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN1029UFDB-7 DMN1029UFDB-7 Diodes Incorporated MOSFET 2N-CH 12V 5.6A 6UDFN
DMP1046UFDB-7 DMP1046UFDB-7 Diodes Incorporated MOSFET 2P-CH 12V 3.8A 6UDFN
DMP1046UFDB-7 DMP1046UFDB-7 Diodes Incorporated MOSFET 2P-CH 12V 3.8A 6UDFN
DMP1046UFDB-7 DMP1046UFDB-7 Diodes Incorporated MOSFET 2P-CH 12V 3.8A 6UDFN
DMN61D8LVT-7 DMN61D8LVT-7 Diodes Incorporated MOSFET 2N-CH 60V 0.63A TSOT26
DMN61D8LVT-7 DMN61D8LVT-7 Diodes Incorporated MOSFET 2N-CH 60V 0.63A TSOT26
DMN61D8LVT-7 DMN61D8LVT-7 Diodes Incorporated MOSFET 2N-CH 60V 0.63A TSOT26
DMN3016LDN-7 DMN3016LDN-7 Diodes Incorporated MOSFET 2N-CH 30V 7.3A 8VDFN
DMN3016LDN-7 DMN3016LDN-7 Diodes Incorporated MOSFET 2N-CH 30V 7.3A 8VDFN
DMN3016LDN-7 DMN3016LDN-7 Diodes Incorporated MOSFET 2N-CH 30V 7.3A 8VDFN
DMC3021LSDQ-13 DMC3021LSDQ-13 Diodes Incorporated MOSFET N/P-CH 30V 8.5A/7A SO-8
DMC3021LSDQ-13 DMC3021LSDQ-13 Diodes Incorporated MOSFET N/P-CH 30V 8.5A/7A SO-8
DMC3021LSDQ-13 DMC3021LSDQ-13 Diodes Incorporated MOSFET N/P-CH 30V 8.5A/7A SO-8
DMN2013UFX-7 DMN2013UFX-7 Diodes Incorporated MOSFET 2N-CH 20V 10A 6-DFN
DMN2013UFX-7 DMN2013UFX-7 Diodes Incorporated MOSFET 2N-CH 20V 10A 6-DFN
DMN2013UFX-7 DMN2013UFX-7 Diodes Incorporated MOSFET 2N-CH 20V 10A 6-DFN
DMC1017UPD-13 DMC1017UPD-13 Diodes Incorporated MOSFET N/P-CH 12V 9.5A/6.9A SMD
DMC1017UPD-13 DMC1017UPD-13 Diodes Incorporated MOSFET N/P-CH 12V 9.5A/6.9A SMD
DMC1017UPD-13 DMC1017UPD-13 Diodes Incorporated MOSFET N/P-CH 12V 9.5A/6.9A SMD
DMP3036SSS-13 DMP3036SSS-13 Diodes Incorporated MOSFET 2P-CH 30V 11.4A SO-8
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