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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN3024LSD-13 DMN3024LSD-13 Diodes Incorporated MOSFET 2N-CH 30V 6.8A 8SO
DMC6040SSD-13 DMC6040SSD-13 Diodes Incorporated MOSFET N/P-CH 60V 5.1A/3.1A SO-8
DMC6040SSD-13 DMC6040SSD-13 Diodes Incorporated MOSFET N/P-CH 60V 5.1A/3.1A SO-8
DMC6040SSD-13 DMC6040SSD-13 Diodes Incorporated MOSFET N/P-CH 60V 5.1A/3.1A SO-8
ZXMC4A16DN8TA ZXMC4A16DN8TA Diodes Incorporated MOSFET N/P-CH 40V 4A/3.6A 8SOIC
ZXMC4A16DN8TA ZXMC4A16DN8TA Diodes Incorporated MOSFET N/P-CH 40V 4A/3.6A 8SOIC
ZXMC4A16DN8TA ZXMC4A16DN8TA Diodes Incorporated MOSFET N/P-CH 40V 4A/3.6A 8SOIC
ZXMP6A16DN8TA ZXMP6A16DN8TA Diodes Incorporated MOSFET 2P-CH 60V 2.9A 8-SOIC
ZXMP6A16DN8TA ZXMP6A16DN8TA Diodes Incorporated MOSFET 2P-CH 60V 2.9A 8-SOIC
ZXMP6A16DN8TA ZXMP6A16DN8TA Diodes Incorporated MOSFET 2P-CH 60V 2.9A 8-SOIC
ZXMHC10A07T8TA ZXMHC10A07T8TA Diodes Incorporated MOSFET 2N/2P-CH 100V 1A/0.8A SM8
ZXMHC10A07T8TA ZXMHC10A07T8TA Diodes Incorporated MOSFET 2N/2P-CH 100V 1A/0.8A SM8
ZXMHC10A07T8TA ZXMHC10A07T8TA Diodes Incorporated MOSFET 2N/2P-CH 100V 1A/0.8A SM8
ZXMC4559DN8TA ZXMC4559DN8TA Diodes Incorporated MOSFET N/P-CH 60V 8SOIC
ZXMC4559DN8TA ZXMC4559DN8TA Diodes Incorporated MOSFET N/P-CH 60V 8SOIC
ZXMC4559DN8TA ZXMC4559DN8TA Diodes Incorporated MOSFET N/P-CH 60V 8SOIC
ZXMN6A09DN8TA ZXMN6A09DN8TA Diodes Incorporated MOSFET 2N-CH 60V 4.3A 8-SOIC
ZXMN6A09DN8TA ZXMN6A09DN8TA Diodes Incorporated MOSFET 2N-CH 60V 4.3A 8-SOIC
ZXMN2A04DN8TA ZXMN2A04DN8TA Diodes Incorporated MOSFET 2N-CH 20V 5.9A 8-SOIC
ZXMN2A04DN8TA ZXMN2A04DN8TA Diodes Incorporated MOSFET 2N-CH 20V 5.9A 8-SOIC
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