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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXMC3A17DN8TA ZXMC3A17DN8TA Diodes Incorporated MOSFET N/P-CH 30V 8SOIC
ZXMC3A17DN8TA ZXMC3A17DN8TA Diodes Incorporated MOSFET N/P-CH 30V 8SOIC
ZXMC3A17DN8TA ZXMC3A17DN8TA Diodes Incorporated MOSFET N/P-CH 30V 8SOIC
ZXMN10A08DN8TA ZXMN10A08DN8TA Diodes Incorporated MOSFET 2N-CH 100V 1.6A 8-SOIC
ZXMN10A08DN8TA ZXMN10A08DN8TA Diodes Incorporated MOSFET 2N-CH 100V 1.6A 8-SOIC
ZXMN10A08DN8TA ZXMN10A08DN8TA Diodes Incorporated MOSFET 2N-CH 100V 1.6A 8-SOIC
ZXMP6A17DN8TA ZXMP6A17DN8TA Diodes Incorporated MOSFET 2P-CH 60V 2.7A 8-SOIC
ZXMP6A17DN8TA ZXMP6A17DN8TA Diodes Incorporated MOSFET 2P-CH 60V 2.7A 8-SOIC
ZXMP6A17DN8TA ZXMP6A17DN8TA Diodes Incorporated MOSFET 2P-CH 60V 2.7A 8-SOIC
DMP2100UCB9-7 DMP2100UCB9-7 Diodes Incorporated MOSFET 2P-CH 20V 3A 9UWLB
DMP2100UCB9-7 DMP2100UCB9-7 Diodes Incorporated MOSFET 2P-CH 20V 3A 9UWLB
DMP2100UCB9-7 DMP2100UCB9-7 Diodes Incorporated MOSFET 2P-CH 20V 3A 9UWLB
DMG8601UFG-7 DMG8601UFG-7 Diodes Incorporated MOSFET 2N-CH 20V 6.1A DFN
DMG8601UFG-7 DMG8601UFG-7 Diodes Incorporated MOSFET 2N-CH 20V 6.1A DFN
DMG8601UFG-7 DMG8601UFG-7 Diodes Incorporated MOSFET 2N-CH 20V 6.1A DFN
ZXMD63N02XTA ZXMD63N02XTA Diodes Incorporated MOSFET 2N-CH 20V 2.5A 8-MSOP
ZXMD63N02XTA ZXMD63N02XTA Diodes Incorporated MOSFET 2N-CH 20V 2.5A 8-MSOP
ZXMD63N02XTA ZXMD63N02XTA Diodes Incorporated MOSFET 2N-CH 20V 2.5A 8-MSOP
DMN3024LSD-13 DMN3024LSD-13 Diodes Incorporated MOSFET 2N-CH 30V 6.8A 8SO
DMN3024LSD-13 DMN3024LSD-13 Diodes Incorporated MOSFET 2N-CH 30V 6.8A 8SO
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