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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXMD63P03XTA ZXMD63P03XTA Diodes Incorporated MOSFET 2P-CH 30V 8-MSOP
ZXMD63P03XTA ZXMD63P03XTA Diodes Incorporated MOSFET 2P-CH 30V 8-MSOP
ZXMD63P03XTA ZXMD63P03XTA Diodes Incorporated MOSFET 2P-CH 30V 8-MSOP
ZXMN3A04DN8TA ZXMN3A04DN8TA Diodes Incorporated MOSFET 2N-CH 30V 6.5A 8-SOIC
ZXMN3A04DN8TA ZXMN3A04DN8TA Diodes Incorporated MOSFET 2N-CH 30V 6.5A 8-SOIC
ZXMN3A04DN8TA ZXMN3A04DN8TA Diodes Incorporated MOSFET 2N-CH 30V 6.5A 8-SOIC
ZXMD63N03XTA ZXMD63N03XTA Diodes Incorporated MOSFET 2N-CH 30V 2.3A 8-MSOP
ZXMD63N03XTA ZXMD63N03XTA Diodes Incorporated MOSFET 2N-CH 30V 2.3A 8-MSOP
ZXMD63N03XTA ZXMD63N03XTA Diodes Incorporated MOSFET 2N-CH 30V 2.3A 8-MSOP
DMN3135LVT-7 DMN3135LVT-7 Diodes Incorporated MOSFET N-CH 30V 3.5A TSOT26
DMN3135LVT-7 DMN3135LVT-7 Diodes Incorporated MOSFET N-CH 30V 3.5A TSOT26
DMN3135LVT-7 DMN3135LVT-7 Diodes Incorporated MOSFET N-CH 30V 3.5A TSOT26
DMN66D0LDW-7 DMN66D0LDW-7 Diodes Incorporated MOSFET 2N-CH 60V 0.115A SOT-363
DMN66D0LDW-7 DMN66D0LDW-7 Diodes Incorporated MOSFET 2N-CH 60V 0.115A SOT-363
DMN66D0LDW-7 DMN66D0LDW-7 Diodes Incorporated MOSFET 2N-CH 60V 0.115A SOT-363
DMS3019SSD-13 DMS3019SSD-13 Diodes Incorporated MOSFET 2N-CH 30V 7A/5.7A 8SO
DMS3019SSD-13 DMS3019SSD-13 Diodes Incorporated MOSFET 2N-CH 30V 7A/5.7A 8SO
DMS3019SSD-13 DMS3019SSD-13 Diodes Incorporated MOSFET 2N-CH 30V 7A/5.7A 8SO
DMS3017SSD-13 DMS3017SSD-13 Diodes Incorporated MOSFET 2N-CH 30V 8A/6A 8SO
DMS3017SSD-13 DMS3017SSD-13 Diodes Incorporated MOSFET 2N-CH 30V 8A/6A 8SO
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