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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN2016UTS-13 DMN2016UTS-13 Diodes Incorporated MOSFET 2N-CH 20V 8.58A 8-TSSOP
DMN2016UTS-13 DMN2016UTS-13 Diodes Incorporated MOSFET 2N-CH 20V 8.58A 8-TSSOP
DMN2016UTS-13 DMN2016UTS-13 Diodes Incorporated MOSFET 2N-CH 20V 8.58A 8-TSSOP
ZXMHC3A01T8TA ZXMHC3A01T8TA Diodes Incorporated MOSFET 2N/2P-CH 30V SM8
ZXMHC3A01T8TA ZXMHC3A01T8TA Diodes Incorporated MOSFET 2N/2P-CH 30V SM8
ZXMHC3A01T8TA ZXMHC3A01T8TA Diodes Incorporated MOSFET 2N/2P-CH 30V SM8
ZXMHN6A07T8TA ZXMHN6A07T8TA Diodes Incorporated MOSFET 4N-CH 60V 1.4A SM8
ZXMHN6A07T8TA ZXMHN6A07T8TA Diodes Incorporated MOSFET 4N-CH 60V 1.4A SM8
ZXMHN6A07T8TA ZXMHN6A07T8TA Diodes Incorporated MOSFET 4N-CH 60V 1.4A SM8
ZXMD63C03XTA ZXMD63C03XTA Diodes Incorporated MOSFET N/P-CH 30V 8-MSOP
ZXMD63C03XTA ZXMD63C03XTA Diodes Incorporated MOSFET N/P-CH 30V 8-MSOP
ZXMD63C03XTA ZXMD63C03XTA Diodes Incorporated MOSFET N/P-CH 30V 8-MSOP
DMN53D0LDW-7 DMN53D0LDW-7 Diodes Incorporated MOSFET 2N-CH 50V 0.36A SOT363
DMN53D0LDW-7 DMN53D0LDW-7 Diodes Incorporated MOSFET 2N-CH 50V 0.36A SOT363
DMN53D0LDW-7 DMN53D0LDW-7 Diodes Incorporated MOSFET 2N-CH 50V 0.36A SOT363
DMP56D0UV-7 DMP56D0UV-7 Diodes Incorporated MOSFET 2P-CH 50V 0.16A SOT563
DMP56D0UV-7 DMP56D0UV-7 Diodes Incorporated MOSFET 2P-CH 50V 0.16A SOT563
DMP56D0UV-7 DMP56D0UV-7 Diodes Incorporated MOSFET 2P-CH 50V 0.16A SOT563
DMN2300UFL4-7 DMN2300UFL4-7 Diodes Incorporated MOSFET 2N-CH 20V 2.11A 6DFN
DMN2300UFL4-7 DMN2300UFL4-7 Diodes Incorporated MOSFET 2N-CH 20V 2.11A 6DFN
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