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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXMHC6A07T8TA ZXMHC6A07T8TA Diodes Incorporated MOSFET 2N/2P-CH 60V SM8
ZXMP6A18DN8TA ZXMP6A18DN8TA Diodes Incorporated MOSFET 2P-CH 60V 3.7A 8-SOIC
ZXMP6A18DN8TA ZXMP6A18DN8TA Diodes Incorporated MOSFET 2P-CH 60V 3.7A 8-SOIC
ZXMP6A18DN8TA ZXMP6A18DN8TA Diodes Incorporated MOSFET 2P-CH 60V 3.7A 8-SOIC
ZXMC3A16DN8TC ZXMC3A16DN8TC Diodes Incorporated MOSFET N/P-CH 30V 8SOIC
ZXMC3A16DN8TC ZXMC3A16DN8TC Diodes Incorporated MOSFET N/P-CH 30V 8SOIC
ZXMC3A16DN8TC ZXMC3A16DN8TC Diodes Incorporated MOSFET N/P-CH 30V 8SOIC
DMN63D8LV-7 DMN63D8LV-7 Diodes Incorporated MOSFET 2N-CH 30V 0.26A SOT563
DMN63D8LV-7 DMN63D8LV-7 Diodes Incorporated MOSFET 2N-CH 30V 0.26A SOT563
DMN63D8LV-7 DMN63D8LV-7 Diodes Incorporated MOSFET 2N-CH 30V 0.26A SOT563
DMN65D8LDW-7 DMN65D8LDW-7 Diodes Incorporated MOSFET 2N-CH 60V 0.18A SOT363
DMN65D8LDW-7 DMN65D8LDW-7 Diodes Incorporated MOSFET 2N-CH 60V 0.18A SOT363
DMN65D8LDW-7 DMN65D8LDW-7 Diodes Incorporated MOSFET 2N-CH 60V 0.18A SOT363
DMN3190LDW-7 DMN3190LDW-7 Diodes Incorporated MOSFET 2N-CH 30V 1A SOT363
DMN3190LDW-7 DMN3190LDW-7 Diodes Incorporated MOSFET 2N-CH 30V 1A SOT363
DMN3190LDW-7 DMN3190LDW-7 Diodes Incorporated MOSFET 2N-CH 30V 1A SOT363
DMP3085LSD-13 DMP3085LSD-13 Diodes Incorporated MOSFET 2P-CH 30V 3.9A 8SO
DMP3085LSD-13 DMP3085LSD-13 Diodes Incorporated MOSFET 2P-CH 30V 3.9A 8SO
DMP3085LSD-13 DMP3085LSD-13 Diodes Incorporated MOSFET 2P-CH 30V 3.9A 8SO
DMG1023UV-7 DMG1023UV-7 Diodes Incorporated MOSFET 2P-CH 20V 1.03A SOT563
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