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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN32D2LV-7 DMN32D2LV-7 Diodes Incorporated MOSFET 2N-CH 30V 0.4A SOT-563
DMN32D2LV-7 DMN32D2LV-7 Diodes Incorporated MOSFET 2N-CH 30V 0.4A SOT-563
DMN32D2LV-7 DMN32D2LV-7 Diodes Incorporated MOSFET 2N-CH 30V 0.4A SOT-563
DMG9926USD-13 DMG9926USD-13 Diodes Incorporated MOSFET 2N-CH 20V 8A SOP8L
DMG9926USD-13 DMG9926USD-13 Diodes Incorporated MOSFET 2N-CH 20V 8A SOP8L
DMG9926USD-13 DMG9926USD-13 Diodes Incorporated MOSFET 2N-CH 20V 8A SOP8L
DMC3025LSD-13 DMC3025LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 6.5A/4.2A 8SO
DMC3025LSD-13 DMC3025LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 6.5A/4.2A 8SO
DMC3025LSD-13 DMC3025LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 6.5A/4.2A 8SO
DMN2041LSD-13 DMN2041LSD-13 Diodes Incorporated MOSFET 2N-CH 20V 7.63A 8SO
DMN2041LSD-13 DMN2041LSD-13 Diodes Incorporated MOSFET 2N-CH 20V 7.63A 8SO
DMN2041LSD-13 DMN2041LSD-13 Diodes Incorporated MOSFET 2N-CH 20V 7.63A 8SO
DMG9926UDM-7 DMG9926UDM-7 Diodes Incorporated MOSFET 2N-CH 20V 4.2A SOT-26
DMG9926UDM-7 DMG9926UDM-7 Diodes Incorporated MOSFET 2N-CH 20V 4.2A SOT-26
DMG9926UDM-7 DMG9926UDM-7 Diodes Incorporated MOSFET 2N-CH 20V 4.2A SOT-26
DMC3028LSD-13 DMC3028LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 6.6A/6.8A 8SO
DMC3028LSD-13 DMC3028LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 6.6A/6.8A 8SO
DMC3028LSD-13 DMC3028LSD-13 Diodes Incorporated MOSFET N/P-CH 30V 6.6A/6.8A 8SO
DMC2700UDM-7 DMC2700UDM-7 Diodes Incorporated MOSFET N/P-CH 20V SOT26
DMC2700UDM-7 DMC2700UDM-7 Diodes Incorporated MOSFET N/P-CH 20V SOT26
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