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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMG1023UV-7 DMG1023UV-7 Diodes Incorporated MOSFET 2P-CH 20V 1.03A SOT563
DMG1023UV-7 DMG1023UV-7 Diodes Incorporated MOSFET 2P-CH 20V 1.03A SOT563
DMG1026UV-7 DMG1026UV-7 Diodes Incorporated MOSFET 2N-CH 60V 0.41A SOT-563
DMG1026UV-7 DMG1026UV-7 Diodes Incorporated MOSFET 2N-CH 60V 0.41A SOT-563
DMG1026UV-7 DMG1026UV-7 Diodes Incorporated MOSFET 2N-CH 60V 0.41A SOT-563
DMN2004VK-7 DMN2004VK-7 Diodes Incorporated MOSFET 2N-CH 20V 0.54A SOT-563
DMN2004VK-7 DMN2004VK-7 Diodes Incorporated MOSFET 2N-CH 20V 0.54A SOT-563
DMN2004VK-7 DMN2004VK-7 Diodes Incorporated MOSFET 2N-CH 20V 0.54A SOT-563
DMN2004DWK-7 DMN2004DWK-7 Diodes Incorporated MOSFET 2N-CH 20V 0.54A SOT-363
DMN2004DWK-7 DMN2004DWK-7 Diodes Incorporated MOSFET 2N-CH 20V 0.54A SOT-363
DMN2004DWK-7 DMN2004DWK-7 Diodes Incorporated MOSFET 2N-CH 20V 0.54A SOT-363
DMN601DWK-7 DMN601DWK-7 Diodes Incorporated MOSFET 2N-CH 60V 0.305A SOT-363
DMN601DWK-7 DMN601DWK-7 Diodes Incorporated MOSFET 2N-CH 60V 0.305A SOT-363
DMN601DWK-7 DMN601DWK-7 Diodes Incorporated MOSFET 2N-CH 60V 0.305A SOT-363
DMN601DMK-7 DMN601DMK-7 Diodes Incorporated MOSFET 2N-CH 60V 0.51A SOT26
DMN601DMK-7 DMN601DMK-7 Diodes Incorporated MOSFET 2N-CH 60V 0.51A SOT26
DMN601DMK-7 DMN601DMK-7 Diodes Incorporated MOSFET 2N-CH 60V 0.51A SOT26
DMN2004DMK-7 DMN2004DMK-7 Diodes Incorporated MOSFET 2N-CH 20V 0.54A SOT-26
DMN2004DMK-7 DMN2004DMK-7 Diodes Incorporated MOSFET 2N-CH 20V 0.54A SOT-26
DMN2004DMK-7 DMN2004DMK-7 Diodes Incorporated MOSFET 2N-CH 20V 0.54A SOT-26
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