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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN6066SSD-13 DMN6066SSD-13 Diodes Incorporated MOSFET 2N-CH 60V 3.3A 8SO
DMN6066SSD-13 DMN6066SSD-13 Diodes Incorporated MOSFET 2N-CH 60V 3.3A 8SO
ZXMC10A816N8TC ZXMC10A816N8TC Diodes Incorporated MOSFET N/P-CH 100V 2A 8-SOIC
ZXMC10A816N8TC ZXMC10A816N8TC Diodes Incorporated MOSFET N/P-CH 100V 2A 8-SOIC
ZXMC10A816N8TC ZXMC10A816N8TC Diodes Incorporated MOSFET N/P-CH 100V 2A 8-SOIC
ZXMC3AMCTA ZXMC3AMCTA Diodes Incorporated MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
ZXMC3AMCTA ZXMC3AMCTA Diodes Incorporated MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
ZXMC3AMCTA ZXMC3AMCTA Diodes Incorporated MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
ZXMHC3A01N8TC ZXMHC3A01N8TC Diodes Incorporated MOSFET 2N/2P-CH 30V 8-SOIC
ZXMHC3A01N8TC ZXMHC3A01N8TC Diodes Incorporated MOSFET 2N/2P-CH 30V 8-SOIC
ZXMHC3A01N8TC ZXMHC3A01N8TC Diodes Incorporated MOSFET 2N/2P-CH 30V 8-SOIC
DMN5L06DMK-7 DMN5L06DMK-7 Diodes Incorporated MOSFET 2N-CH 50V 0.305A SOT-26
DMN5L06DMK-7 DMN5L06DMK-7 Diodes Incorporated MOSFET 2N-CH 50V 0.305A SOT-26
DMN5L06DMK-7 DMN5L06DMK-7 Diodes Incorporated MOSFET 2N-CH 50V 0.305A SOT-26
DMC2004VK-7 DMC2004VK-7 Diodes Incorporated MOSFET N/P-CH 20V SOT-563
DMC2004VK-7 DMC2004VK-7 Diodes Incorporated MOSFET N/P-CH 20V SOT-563
DMC2004VK-7 DMC2004VK-7 Diodes Incorporated MOSFET N/P-CH 20V SOT-563
BSS84V-7 BSS84V-7 Diodes Incorporated MOSFET 2P-CH 50V 0.13A SOT-563
BSS84V-7 BSS84V-7 Diodes Incorporated MOSFET 2P-CH 50V 0.13A SOT-563
BSS84V-7 BSS84V-7 Diodes Incorporated MOSFET 2P-CH 50V 0.13A SOT-563
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