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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN2300UFL4-7 DMN2300UFL4-7 Diodes Incorporated MOSFET 2N-CH 20V 2.11A 6DFN
DMN601VK-7 DMN601VK-7 Diodes Incorporated MOSFET 2N-CH 60V 0.305A SOT-563
DMN601VK-7 DMN601VK-7 Diodes Incorporated MOSFET 2N-CH 60V 0.305A SOT-563
DMN601VK-7 DMN601VK-7 Diodes Incorporated MOSFET 2N-CH 60V 0.305A SOT-563
DMP58D0SV-7 DMP58D0SV-7 Diodes Incorporated MOSFET 2P-CH 50V 0.16A SOT-563
DMP58D0SV-7 DMP58D0SV-7 Diodes Incorporated MOSFET 2P-CH 50V 0.16A SOT-563
DMP58D0SV-7 DMP58D0SV-7 Diodes Incorporated MOSFET 2P-CH 50V 0.16A SOT-563
DMN2029USD-13 DMN2029USD-13 Diodes Incorporated MOSFET 2N-CH 20V 5.8A 8SO
DMN2029USD-13 DMN2029USD-13 Diodes Incorporated MOSFET 2N-CH 20V 5.8A 8SO
DMN2029USD-13 DMN2029USD-13 Diodes Incorporated MOSFET 2N-CH 20V 5.8A 8SO
DMN2014LHAB-7 DMN2014LHAB-7 Diodes Incorporated MOSFET 2N-CH 20V 9A 6-UDFN
DMN2014LHAB-7 DMN2014LHAB-7 Diodes Incorporated MOSFET 2N-CH 20V 9A 6-UDFN
DMN2014LHAB-7 DMN2014LHAB-7 Diodes Incorporated MOSFET 2N-CH 20V 9A 6-UDFN
DMN2040LTS-13 DMN2040LTS-13 Diodes Incorporated MOSFET 2N-CH 20V 6.7A 8TSSOP
DMN2040LTS-13 DMN2040LTS-13 Diodes Incorporated MOSFET 2N-CH 20V 6.7A 8TSSOP
DMN2040LTS-13 DMN2040LTS-13 Diodes Incorporated MOSFET 2N-CH 20V 6.7A 8TSSOP
DMG8822UTS-13 DMG8822UTS-13 Diodes Incorporated MOSFET 2N-CH 20V 4.9A 8TSSOP
DMG8822UTS-13 DMG8822UTS-13 Diodes Incorporated MOSFET 2N-CH 20V 4.9A 8TSSOP
DMG8822UTS-13 DMG8822UTS-13 Diodes Incorporated MOSFET 2N-CH 20V 4.9A 8TSSOP
DMC3021LK4-13 DMC3021LK4-13 Diodes Incorporated MOSFET N/P-CH 30V TO252-4L
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