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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMS3017SSD-13 DMS3017SSD-13 Diodes Incorporated MOSFET 2N-CH 30V 8A/6A 8SO
ZXMN3AMCTA ZXMN3AMCTA Diodes Incorporated MOSFET 2N-CH 30V 2.9A DFN
ZXMN3AMCTA ZXMN3AMCTA Diodes Incorporated MOSFET 2N-CH 30V 2.9A DFN
ZXMN3AMCTA ZXMN3AMCTA Diodes Incorporated MOSFET 2N-CH 30V 2.9A DFN
ZXMN3G32DN8TA ZXMN3G32DN8TA Diodes Incorporated MOSFET 2N-CH 30V 5.5A 8SOIC
ZXMN3G32DN8TA ZXMN3G32DN8TA Diodes Incorporated MOSFET 2N-CH 30V 5.5A 8SOIC
ZXMN3G32DN8TA ZXMN3G32DN8TA Diodes Incorporated MOSFET 2N-CH 30V 5.5A 8SOIC
DMN2028UFDH-7 DMN2028UFDH-7 Diodes Incorporated MOSFET 2N-CH 20V 6.8A POWERDI
DMN2028UFDH-7 DMN2028UFDH-7 Diodes Incorporated MOSFET 2N-CH 20V 6.8A POWERDI
DMN2028UFDH-7 DMN2028UFDH-7 Diodes Incorporated MOSFET 2N-CH 20V 6.8A POWERDI
DMG4932LSD-13 DMG4932LSD-13 Diodes Incorporated MOSFET 2N-CH 30V 9.5A 8SO
DMG4932LSD-13 DMG4932LSD-13 Diodes Incorporated MOSFET 2N-CH 30V 9.5A 8SO
DMG4932LSD-13 DMG4932LSD-13 Diodes Incorporated MOSFET 2N-CH 30V 9.5A 8SO
DMN2016LHAB-7 DMN2016LHAB-7 Diodes Incorporated MOSFET 2N-CH 20V 7.5A 6UDFN
DMN2016LHAB-7 DMN2016LHAB-7 Diodes Incorporated MOSFET 2N-CH 20V 7.5A 6UDFN
DMN2016LHAB-7 DMN2016LHAB-7 Diodes Incorporated MOSFET 2N-CH 20V 7.5A 6UDFN
DMG6301UDW-7 DMG6301UDW-7 Diodes Incorporated MOSFET 2N-CH 25V 0.24A SOT363
DMG6301UDW-7 DMG6301UDW-7 Diodes Incorporated MOSFET 2N-CH 25V 0.24A SOT363
DMG6301UDW-7 DMG6301UDW-7 Diodes Incorporated MOSFET 2N-CH 25V 0.24A SOT363
DMC25D0UVT-7 DMC25D0UVT-7 Diodes Incorporated MOSFET N/P-CH 30V TSOT26
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