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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN2041UFDB-7 DMN2041UFDB-7 Diodes Incorporated MOSFET 2N-CH 20V 4.7A 6UDFN
DMN2041UFDB-7 DMN2041UFDB-7 Diodes Incorporated MOSFET 2N-CH 20V 4.7A 6UDFN
DMN2041UFDB-7 DMN2041UFDB-7 Diodes Incorporated MOSFET 2N-CH 20V 4.7A 6UDFN
DMP2060UFDB-7 DMP2060UFDB-7 Diodes Incorporated MOSFET 2P-CH 20V 3.2A 6UDFN
DMP2060UFDB-7 DMP2060UFDB-7 Diodes Incorporated MOSFET 2P-CH 20V 3.2A 6UDFN
DMP2060UFDB-7 DMP2060UFDB-7 Diodes Incorporated MOSFET 2P-CH 20V 3.2A 6UDFN
DMG6602SVTQ-7 DMG6602SVTQ-7 Diodes Incorporated MOSFET N/P-CH 30V TSOT26
DMG6602SVTQ-7 DMG6602SVTQ-7 Diodes Incorporated MOSFET N/P-CH 30V TSOT26
DMG6602SVTQ-7 DMG6602SVTQ-7 Diodes Incorporated MOSFET N/P-CH 30V TSOT26
2N7002DWQ-7-F 2N7002DWQ-7-F Diodes Incorporated MOSFET 2N-CH 60V 0.23A SOT363
2N7002DWQ-7-F 2N7002DWQ-7-F Diodes Incorporated MOSFET 2N-CH 60V 0.23A SOT363
2N7002DWQ-7-F 2N7002DWQ-7-F Diodes Incorporated MOSFET 2N-CH 60V 0.23A SOT363
DMP2200UDW-7 DMP2200UDW-7 Diodes Incorporated MOSFET 2P-CH 20V 0.9A SOT363
DMP2200UDW-7 DMP2200UDW-7 Diodes Incorporated MOSFET 2P-CH 20V 0.9A SOT363
DMP2200UDW-7 DMP2200UDW-7 Diodes Incorporated MOSFET 2P-CH 20V 0.9A SOT363
DMC3400SDW-7 DMC3400SDW-7 Diodes Incorporated MOSFET N/P-CH 30V SOT363
DMC3400SDW-7 DMC3400SDW-7 Diodes Incorporated MOSFET N/P-CH 30V SOT363
DMC3400SDW-7 DMC3400SDW-7 Diodes Incorporated MOSFET N/P-CH 30V SOT363
DMN1029UFDB-7 DMN1029UFDB-7 Diodes Incorporated MOSFET 2N-CH 12V 5.6A 6UDFN
DMN1029UFDB-7 DMN1029UFDB-7 Diodes Incorporated MOSFET 2N-CH 12V 5.6A 6UDFN
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