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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMC25D0UVT-7 DMC25D0UVT-7 Diodes Incorporated MOSFET N/P-CH 30V TSOT26
DMC25D0UVT-7 DMC25D0UVT-7 Diodes Incorporated MOSFET N/P-CH 30V TSOT26
DMC25D1UVT-7 DMC25D1UVT-7 Diodes Incorporated MOSFET N/P-CH 30V TSOT26
DMC25D1UVT-7 DMC25D1UVT-7 Diodes Incorporated MOSFET N/P-CH 30V TSOT26
DMC25D1UVT-7 DMC25D1UVT-7 Diodes Incorporated MOSFET N/P-CH 30V TSOT26
DMN3035LWN-7 DMN3035LWN-7 Diodes Incorporated MOSFET 2N-CH 30V 5.5A 8VDFN
DMN3035LWN-7 DMN3035LWN-7 Diodes Incorporated MOSFET 2N-CH 30V 5.5A 8VDFN
DMN3035LWN-7 DMN3035LWN-7 Diodes Incorporated MOSFET 2N-CH 30V 5.5A 8VDFN
DMN6070SSD-13 DMN6070SSD-13 Diodes Incorporated MOSFET 2N-CH 60V 3.3A SO-8
DMN6070SSD-13 DMN6070SSD-13 Diodes Incorporated MOSFET 2N-CH 60V 3.3A SO-8
DMN6070SSD-13 DMN6070SSD-13 Diodes Incorporated MOSFET 2N-CH 60V 3.3A SO-8
DMN1033UCB4-7 DMN1033UCB4-7 Diodes Incorporated MOSFET 2N-CH 12V U-WLB1818-4
DMN1033UCB4-7 DMN1033UCB4-7 Diodes Incorporated MOSFET 2N-CH 12V U-WLB1818-4
DMN1033UCB4-7 DMN1033UCB4-7 Diodes Incorporated MOSFET 2N-CH 12V U-WLB1818-4
DMC1029UFDB-7 DMC1029UFDB-7 Diodes Incorporated MOSFET N/P-CH 12V 6UDFN
DMC1029UFDB-7 DMC1029UFDB-7 Diodes Incorporated MOSFET N/P-CH 12V 6UDFN
DMC1029UFDB-7 DMC1029UFDB-7 Diodes Incorporated MOSFET N/P-CH 12V 6UDFN
DMN2011UFX-7 DMN2011UFX-7 Diodes Incorporated MOSFET 2N-CH 20V 12.2A DFN2050-4
DMN2011UFX-7 DMN2011UFX-7 Diodes Incorporated MOSFET 2N-CH 20V 12.2A DFN2050-4
DMN2011UFX-7 DMN2011UFX-7 Diodes Incorporated MOSFET 2N-CH 20V 12.2A DFN2050-4
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