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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4876DY-T1-E3 SI4876DY-T1-E3 Vishay Siliconix MOSFET N-CH 20V 14A 8-SOIC
SI4876DY-T1-E3 SI4876DY-T1-E3 Vishay Siliconix MOSFET N-CH 20V 14A 8-SOIC
SI4876DY-T1-E3 SI4876DY-T1-E3 Vishay Siliconix MOSFET N-CH 20V 14A 8-SOIC
SI5401DC-T1-E3 SI5401DC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 5.2A 1206-8
SI5401DC-T1-E3 SI5401DC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 5.2A 1206-8
SI5401DC-T1-E3 SI5401DC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 5.2A 1206-8
SI5402BDC-T1-E3 SI5402BDC-T1-E3 Vishay Siliconix MOSFET N-CH 30V 4.9A 1206-8
SI5402BDC-T1-E3 SI5402BDC-T1-E3 Vishay Siliconix MOSFET N-CH 30V 4.9A 1206-8
SI5402BDC-T1-E3 SI5402BDC-T1-E3 Vishay Siliconix MOSFET N-CH 30V 4.9A 1206-8
SI5406DC-T1-E3 SI5406DC-T1-E3 Vishay Siliconix MOSFET N-CH 12V 6.9A 1206-8
SI5406DC-T1-E3 SI5406DC-T1-E3 Vishay Siliconix MOSFET N-CH 12V 6.9A 1206-8
SI5406DC-T1-E3 SI5406DC-T1-E3 Vishay Siliconix MOSFET N-CH 12V 6.9A 1206-8
SI5435BDC-T1-E3 SI5435BDC-T1-E3 Vishay Siliconix MOSFET P-CH 30V 4.3A 1206-8
SI5435BDC-T1-E3 SI5435BDC-T1-E3 Vishay Siliconix MOSFET P-CH 30V 4.3A 1206-8
SI5435BDC-T1-E3 SI5435BDC-T1-E3 Vishay Siliconix MOSFET P-CH 30V 4.3A 1206-8
SI5445BDC-T1-E3 SI5445BDC-T1-E3 Vishay Siliconix MOSFET P-CH 8V 5.2A 1206-8
SI5445BDC-T1-E3 SI5445BDC-T1-E3 Vishay Siliconix MOSFET P-CH 8V 5.2A 1206-8
SI5445BDC-T1-E3 SI5445BDC-T1-E3 Vishay Siliconix MOSFET P-CH 8V 5.2A 1206-8
SI5447DC-T1-E3 SI5447DC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.5A 1206-8
SI5447DC-T1-E3 SI5447DC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.5A 1206-8
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