中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 10261027102810291030103110321033103410351036 1054
PDF 缩略图 器件名称 制造商 描述
SI7411DN-T1-E3 SI7411DN-T1-E3 Vishay Siliconix MOSFET P-CH 20V 7.5A 1212-8
SI7411DN-T1-E3 SI7411DN-T1-E3 Vishay Siliconix MOSFET P-CH 20V 7.5A 1212-8
SI7411DN-T1-E3 SI7411DN-T1-E3 Vishay Siliconix MOSFET P-CH 20V 7.5A 1212-8
SI7413DN-T1-E3 SI7413DN-T1-E3 Vishay Siliconix MOSFET P-CH 20V 8.4A 1212-8
SI7413DN-T1-E3 SI7413DN-T1-E3 Vishay Siliconix MOSFET P-CH 20V 8.4A 1212-8
SI7413DN-T1-E3 SI7413DN-T1-E3 Vishay Siliconix MOSFET P-CH 20V 8.4A 1212-8
SI7448DP-T1-E3 SI7448DP-T1-E3 Vishay Siliconix MOSFET N-CH 20V 13.4A PPAK SO-8
SI7448DP-T1-E3 SI7448DP-T1-E3 Vishay Siliconix MOSFET N-CH 20V 13.4A PPAK SO-8
SI7448DP-T1-E3 SI7448DP-T1-E3 Vishay Siliconix MOSFET N-CH 20V 13.4A PPAK SO-8
SI7462DP-T1-E3 SI7462DP-T1-E3 Vishay Siliconix MOSFET N-CH 200V 2.6A PPAK SO-8
SI7462DP-T1-E3 SI7462DP-T1-E3 Vishay Siliconix MOSFET N-CH 200V 2.6A PPAK SO-8
SI7476DP-T1-E3 SI7476DP-T1-E3 Vishay Siliconix MOSFET N-CH 40V 15A PPAK SO-8
SI7476DP-T1-E3 SI7476DP-T1-E3 Vishay Siliconix MOSFET N-CH 40V 15A PPAK SO-8
SI7476DP-T1-E3 SI7476DP-T1-E3 Vishay Siliconix MOSFET N-CH 40V 15A PPAK SO-8
SI7483ADP-T1-E3 SI7483ADP-T1-E3 Vishay Siliconix MOSFET P-CH 30V 14A PPAK SO-8
SI7483ADP-T1-E3 SI7483ADP-T1-E3 Vishay Siliconix MOSFET P-CH 30V 14A PPAK SO-8
SI7483ADP-T1-E3 SI7483ADP-T1-E3 Vishay Siliconix MOSFET P-CH 30V 14A PPAK SO-8
SI7485DP-T1-E3 SI7485DP-T1-E3 Vishay Siliconix MOSFET P-CH 20V 12.5A PPAK SO-8
SI7485DP-T1-E3 SI7485DP-T1-E3 Vishay Siliconix MOSFET P-CH 20V 12.5A PPAK SO-8
SI7491DP-T1-E3 SI7491DP-T1-E3 Vishay Siliconix MOSFET P-CH 30V 11A PPAK SO-8
1... 10261027102810291030103110321033103410351036 1054