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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7802DN-T1-GE3 SI7802DN-T1-GE3 Vishay Siliconix MOSFET N-CH 250V 1.24A 1212-8
SI7802DN-T1-GE3 SI7802DN-T1-GE3 Vishay Siliconix MOSFET N-CH 250V 1.24A 1212-8
SI7802DN-T1-GE3 SI7802DN-T1-GE3 Vishay Siliconix MOSFET N-CH 250V 1.24A 1212-8
SI7882DP-T1-GE3 SI7882DP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 13A PPAK SO-8
SI7882DP-T1-GE3 SI7882DP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 13A PPAK SO-8
SI7882DP-T1-GE3 SI7882DP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 13A PPAK SO-8
SIA417DJ-T1-GE3 SIA417DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 12A SC70-6
SIA417DJ-T1-GE3 SIA417DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 12A SC70-6
SIA417DJ-T1-GE3 SIA417DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 12A SC70-6
SIB414DK-T1-GE3 SIB414DK-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 9A PPAK SC75-6
SIB414DK-T1-GE3 SIB414DK-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 9A PPAK SC75-6
SIB414DK-T1-GE3 SIB414DK-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 9A PPAK SC75-6
SIB417DK-T1-GE3 SIB417DK-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 9A SC75-6
SIB417DK-T1-GE3 SIB417DK-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 9A SC75-6
SIB417DK-T1-GE3 SIB417DK-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 9A SC75-6
SIB419DK-T1-GE3 SIB419DK-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 9A SC75-6
SIB419DK-T1-GE3 SIB419DK-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 9A SC75-6
SIB419DK-T1-GE3 SIB419DK-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 9A SC75-6
SIB800EDK-T1-GE3 SIB800EDK-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1.5A SC75-6
SIB800EDK-T1-GE3 SIB800EDK-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1.5A SC75-6
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