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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIB800EDK-T1-GE3 SIB800EDK-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1.5A SC75-6
SI4108DY-T1-GE3 SI4108DY-T1-GE3 Vishay Siliconix MOSFET N-CH 75V 20.5A 8-SOIC
SI4108DY-T1-GE3 SI4108DY-T1-GE3 Vishay Siliconix MOSFET N-CH 75V 20.5A 8-SOIC
SI4110DY-T1-GE3 SI4110DY-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 17.3A 8-SOIC
SI4110DY-T1-GE3 SI4110DY-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 17.3A 8-SOIC
SI4110DY-T1-GE3 SI4110DY-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 17.3A 8-SOIC
SI4170DY-T1-GE3 SI4170DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30A 8-SOIC
SI4170DY-T1-GE3 SI4170DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30A 8-SOIC
SI4170DY-T1-GE3 SI4170DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30A 8-SOIC
SI4660DY-T1-GE3 SI4660DY-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 23.1A 8-SOIC
SI4660DY-T1-GE3 SI4660DY-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 23.1A 8-SOIC
SI4660DY-T1-GE3 SI4660DY-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 23.1A 8-SOIC
SI4688DY-T1-GE3 SI4688DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8.9A 8-SOIC
SI4688DY-T1-GE3 SI4688DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8.9A 8-SOIC
SI4688DY-T1-GE3 SI4688DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8.9A 8-SOIC
SI1065X-T1-GE3 SI1065X-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 1.18A SC89-6
SI1065X-T1-GE3 SI1065X-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 1.18A SC89-6
SI1065X-T1-GE3 SI1065X-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 1.18A SC89-6
SI1071X-T1-GE3 SI1071X-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 0.96A SC89-6
SI1071X-T1-GE3 SI1071X-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 0.96A SC89-6
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