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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIHF18N50C-E3 SIHF18N50C-E3 Vishay Siliconix MOSFET N-CH 500V 18A TO220
SI7860ADP-T1-E3 SI7860ADP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A PPAK SO-8
TP0610K-T1 TP0610K-T1 Vishay Siliconix MOSFET P-CH 60V 185MA SOT23
SI1039X-T1-GE3 SI1039X-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 0.87A SC89
SI1039X-T1-GE3 SI1039X-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 0.87A SC89
SI1039X-T1-GE3 SI1039X-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 0.87A SC89
SI1056X-T1-GE3 SI1056X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V SC-89-6
SI1056X-T1-GE3 SI1056X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V SC-89-6
SI1056X-T1-GE3 SI1056X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V SC-89-6
SI1307EDL-T1-GE3 SI1307EDL-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 0.85A SC-70-3
SI1307EDL-T1-GE3 SI1307EDL-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 0.85A SC-70-3
SI1307EDL-T1-GE3 SI1307EDL-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 0.85A SC-70-3
SI1405BDH-T1-GE3 SI1405BDH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 1.6A SC-70-6
SI1405BDH-T1-GE3 SI1405BDH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 1.6A SC-70-6
SI1405BDH-T1-GE3 SI1405BDH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 1.6A SC-70-6
SI1406DH-T1-GE3 SI1406DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 3.1A SC-70-6
SI1406DH-T1-GE3 SI1406DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 3.1A SC-70-6
SI1406DH-T1-GE3 SI1406DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 3.1A SC-70-6
SI1417EDH-T1-GE3 SI1417EDH-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 2.7A SC-70-6
SI1417EDH-T1-GE3 SI1417EDH-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 2.7A SC-70-6
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