中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 10321033103410351036103710381039104010411042 1054
PDF 缩略图 器件名称 制造商 描述
SI1071X-T1-GE3 SI1071X-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 0.96A SC89-6
SI4825DY-T1-GE3 SI4825DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8.1A 8-SOIC
SI4825DY-T1-GE3 SI4825DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8.1A 8-SOIC
SI4825DY-T1-GE3 SI4825DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8.1A 8-SOIC
SI5435BDC-T1-GE3 SI5435BDC-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 4.3A 1206-8
SI5435BDC-T1-GE3 SI5435BDC-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 4.3A 1206-8
SI5435BDC-T1-GE3 SI5435BDC-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 4.3A 1206-8
SI5447DC-T1-GE3 SI5447DC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.5A 1206-8
SI5447DC-T1-GE3 SI5447DC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.5A 1206-8
SI5447DC-T1-GE3 SI5447DC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.5A 1206-8
SI6410DQ-T1-GE3 SI6410DQ-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 7.8A 8-TSSOP
SI6410DQ-T1-GE3 SI6410DQ-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 7.8A 8-TSSOP
SI6410DQ-T1-GE3 SI6410DQ-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 7.8A 8-TSSOP
SI6433BDQ-T1-GE3 SI6433BDQ-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 4A 8-TSSOP
SI6433BDQ-T1-GE3 SI6433BDQ-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 4A 8-TSSOP
SI6433BDQ-T1-GE3 SI6433BDQ-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 4A 8-TSSOP
SI6435ADQ-T1-GE3 SI6435ADQ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 4.7A 8-TSSOP
SI6435ADQ-T1-GE3 SI6435ADQ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 4.7A 8-TSSOP
SI6459BDQ-T1-GE3 SI6459BDQ-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 2.2A 8-TSSOP
SI6459BDQ-T1-GE3 SI6459BDQ-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 2.2A 8-TSSOP
1... 10321033103410351036103710381039104010411042 1054