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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI6459BDQ-T1-GE3 SI6459BDQ-T1-GE3 Vishay Siliconix MOSFET P-CH 60V 2.2A 8-TSSOP
SI7107DN-T1-GE3 SI7107DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 9.8A 1212-8
SI7107DN-T1-GE3 SI7107DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 9.8A 1212-8
SI7107DN-T1-GE3 SI7107DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 9.8A 1212-8
SI7120DN-T1-GE3 SI7120DN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 6.3A 1212-8
SI7120DN-T1-GE3 SI7120DN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 6.3A 1212-8
SI7366DP-T1-GE3 SI7366DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 13A PPAK SO-8
SI7366DP-T1-GE3 SI7366DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 13A PPAK SO-8
SI7366DP-T1-GE3 SI7366DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 13A PPAK SO-8
SI7411DN-T1-GE3 SI7411DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 7.5A 1212-8
SI7411DN-T1-GE3 SI7411DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 7.5A 1212-8
SI7411DN-T1-GE3 SI7411DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 7.5A 1212-8
SI7459DP-T1-GE3 SI7459DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 13A PPAK SO-8
SI7459DP-T1-GE3 SI7459DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 13A PPAK SO-8
SI7459DP-T1-GE3 SI7459DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 13A PPAK SO-8
SI7483ADP-T1-GE3 SI7483ADP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 14A PPAK SO-8
SI7483ADP-T1-GE3 SI7483ADP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 14A PPAK SO-8
SI7483ADP-T1-GE3 SI7483ADP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 14A PPAK SO-8
SI7485DP-T1-GE3 SI7485DP-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12.5A PPAK SO-8
SI7485DP-T1-GE3 SI7485DP-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12.5A PPAK SO-8
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