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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4484EY-T1-GE3 SI4484EY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 4.8A 8-SOIC
SI4484EY-T1-GE3 SI4484EY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 4.8A 8-SOIC
SI4484EY-T1-GE3 SI4484EY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 4.8A 8-SOIC
SI5402BDC-T1-GE3 SI5402BDC-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 4.9A 1206-8
SI5402BDC-T1-GE3 SI5402BDC-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 4.9A 1206-8
SI5402BDC-T1-GE3 SI5402BDC-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 4.9A 1206-8
SI6443DQ-T1-GE3 SI6443DQ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 7.3A 8-TSSOP
SI6443DQ-T1-GE3 SI6443DQ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 7.3A 8-TSSOP
SI6443DQ-T1-GE3 SI6443DQ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 7.3A 8-TSSOP
SI6467BDQ-T1-GE3 SI6467BDQ-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 6.8A 8TSSOP
SI6467BDQ-T1-GE3 SI6467BDQ-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 6.8A 8TSSOP
SI7462DP-T1-GE3 SI7462DP-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 2.6A PPAK SO-8
SI7462DP-T1-GE3 SI7462DP-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 2.6A PPAK SO-8
SI8467DB-T2-E1 SI8467DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT
SI8467DB-T2-E1 SI8467DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT
SI8467DB-T2-E1 SI8467DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT
SIB455EDK-T1-GE3 SIB455EDK-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 9A SC-75-6
SIB455EDK-T1-GE3 SIB455EDK-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 9A SC-75-6
SIB455EDK-T1-GE3 SIB455EDK-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 9A SC-75-6
SUD06N10-225L-E3 SUD06N10-225L-E3 Vishay Siliconix MOSFET N-CH 100V 6.5A DPAK
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