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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI3434DV-T1-GE3 SI3434DV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 4.6A 6-TSOP
SI3441BDV-T1-GE3 SI3441BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.45A 6-TSOP
SI3445ADV-T1-GE3 SI3445ADV-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 4.4A 6-TSOP
SI3445DV-T1-GE3 SI3445DV-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 6-TSOP
SI3447BDV-T1-GE3 SI3447BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 4.5A 6-TSOP
SI3454ADV-T1-GE3 SI3454ADV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 3.4A 6TSOP
SI3455ADV-T1-GE3 SI3455ADV-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 2.7A 6TSOP
SI3456BDV-T1-GE3 SI3456BDV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 4.5A 6-TSOP
SI3457BDV-T1-GE3 SI3457BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 3.7A 6-TSOP
SI3481DV-T1-GE3 SI3481DV-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 4A 6-TSOP
SI3483DV-T1-GE3 SI3483DV-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 4.7A 6-TSOP
SI3493DV-T1-E3 SI3493DV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 5.3A 6-TSOP
SI3493DV-T1-GE3 SI3493DV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 5.3A 6-TSOP
SI3495DV-T1-GE3 SI3495DV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 5.3A 6-TSOP
SI3812DV-T1-GE3 SI3812DV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 2A 6-TSOP
SI3853DV-T1-GE3 SI3853DV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1.6A 6-TSOP
SI3867DV-T1-GE3 SI3867DV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.9A 6-TSOP
SI4102DY-T1-E3 SI4102DY-T1-E3 Vishay Siliconix MOSFET N-CH 100V 3.8A 8-SOIC
SI4104DY-T1-E3 SI4104DY-T1-E3 Vishay Siliconix MOSFET N-CH 100V 4.6A 8-SOIC
SI4196DY-T1-E3 SI4196DY-T1-E3 Vishay Siliconix MOSFET N-CH 20V 8A 8SOIC
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