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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7407DN-T1-GE3 SI7407DN-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 9.9A PPAK 1212-8
SI7409ADN-T1-GE3 SI7409ADN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 7A PPAK 1212-8
SI7413DN-T1-GE3 SI7413DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 8.4A PPAK 1212-8
SI7425DN-T1-E3 SI7425DN-T1-E3 Vishay Siliconix MOSFET P-CH 12V 8.3A PPAK 1212-8
SI7425DN-T1-GE3 SI7425DN-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 8.3A PPAK 1212-8
SI7440DP-T1-E3 SI7440DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 12A PPAK SO-8
SI7440DP-T1-GE3 SI7440DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A PPAK SO-8
SI7445DP-T1-E3 SI7445DP-T1-E3 Vishay Siliconix MOSFET P-CH 20V 12A PPAK 1212-8
SI7445DP-T1-GE3 SI7445DP-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 12A PPAK 1212-8
SI7448DP-T1-GE3 SI7448DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 13.4A PPAK SO-8
SI7452DP-T1-E3 SI7452DP-T1-E3 Vishay Siliconix MOSFET N-CH 60V 11.5A PPAK SO-8
SI7452DP-T1-GE3 SI7452DP-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 11.5A PPAK SO-8
SI7476DP-T1-GE3 SI7476DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 15A PPAK SO-8
SI7491DP-T1-GE3 SI7491DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 11A PPAK SO-8
SI7495DP-T1-E3 SI7495DP-T1-E3 Vishay Siliconix MOSFET P-CH 12V 13A PPAK SO-8
SI7495DP-T1-GE3 SI7495DP-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 13A PPAK SO-8
SI7856ADP-T1-E3 SI7856ADP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 15A PPAK SO-8
SI7856ADP-T1-GE3 SI7856ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 15A PPAK SO-8
SI7860ADP-T1-GE3 SI7860ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 11A PPAK SO-8
SI7860DP-T1-GE3 SI7860DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 11A PPAK SO-8
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