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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7882DP-T1-E3 SI7882DP-T1-E3 Vishay Siliconix MOSFET N-CH 12V 13A PPAK SO-8
SI7888DP-T1-E3 SI7888DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 9.4A PPAK SO-8
SI7888DP-T1-GE3 SI7888DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9.4A PPAK SO-8
SI9410BDY-T1-GE3 SI9410BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6.2A 8SOIC
SI9424BDY-T1-GE3 SI9424BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 5.6A 8SOIC
SI9434BDY-T1-GE3 SI9434BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.5A 8-SOIC
SUD25N04-25-E3 SUD25N04-25-E3 Vishay Siliconix MOSFET N-CH 40V 25A TO252
SUD25N04-25-T4-E3 SUD25N04-25-T4-E3 Vishay Siliconix MOSFET N-CH 40V 25A TO252
SUD45P03-15-E3 SUD45P03-15-E3 Vishay Siliconix MOSFET P-CH 30V TO252
SUD50N03-12P-E3 SUD50N03-12P-E3 Vishay Siliconix MOSFET N-CH 30V TO252
SUD50N03-16P-E3 SUD50N03-16P-E3 Vishay Siliconix MOSFET N-CH 30V TO252
SUD50N03-16P-GE3 SUD50N03-16P-GE3 Vishay Siliconix MOSFET N-CH 30V TO252
SUD50N04-37P-T4-E3 SUD50N04-37P-T4-E3 Vishay Siliconix MOSFET N-CH 40V 5.4A TO252
SUD50N10-18P-E3 SUD50N10-18P-E3 Vishay Siliconix MOSFET N-CH 100V 8.2A TO252
SUP40P10-43-GE3 SUP40P10-43-GE3 Vishay Siliconix MOSFET P-CH 100V 36A TO220AB
SUP60N06-12P-E3 SUP60N06-12P-E3 Vishay Siliconix MOSFET N-CH 60V 60A TO220AB
SUP65P04-15-E3 SUP65P04-15-E3 Vishay Siliconix MOSFET P-CH 40V 65A TO220AB
TP0202K-T1-GE3 TP0202K-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 385MA SOT23-3
SQ3418EEV-T1-GE3 SQ3418EEV-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 8A 6TSOP
SQ3418EEV-T1-GE3 SQ3418EEV-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 8A 6TSOP
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