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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI6404DQ-T1-GE3 SI6404DQ-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8.6A 8TSSOP
SI6413DQ-T1-E3 SI6413DQ-T1-E3 Vishay Siliconix MOSFET P-CH 20V 7.2A 8TSSOP
SI6443DQ-T1-E3 SI6443DQ-T1-E3 Vishay Siliconix MOSFET P-CH 30V 7.3A 8-TSSOP
SI6465DQ-T1-E3 SI6465DQ-T1-E3 Vishay Siliconix MOSFET P-CH 8V 8.8A 8TSSOP
SI6465DQ-T1-GE3 SI6465DQ-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 8.8A 8TSSOP
SI6466ADQ-T1-E3 SI6466ADQ-T1-E3 Vishay Siliconix MOSFET N-CH 20V 6.8A 8TSSOP
SI6466ADQ-T1-GE3 SI6466ADQ-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 6.8A 8TSSOP
SI6473DQ-T1-E3 SI6473DQ-T1-E3 Vishay Siliconix MOSFET P-CH 20V 6.2A 8-TSSOP
SI6473DQ-T1-GE3 SI6473DQ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 6.2A 8-TSSOP
SI7368DP-T1-E3 SI7368DP-T1-E3 Vishay Siliconix MOSFET N-CH 20V 13A PPAK SO-8
SI7368DP-T1-GE3 SI7368DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 13A PPAK SO-8
SI7388DP-T1-E3 SI7388DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 12A PPAK SO-8
SI7388DP-T1-GE3 SI7388DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A PPAK SO-8
SI7392DP-T1-E3 SI7392DP-T1-E3 Vishay Siliconix MOSFET N-CH 30V 9A PPAK SO-8
SI7392DP-T1-GE3 SI7392DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9A PPAK SO-8
SI7402DN-T1-E3 SI7402DN-T1-E3 Vishay Siliconix MOSFET N-CH 12V 13A PPAK 1212-8
SI7402DN-T1-GE3 SI7402DN-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 13A PPAK 1212-8
SI7404DN-T1-E3 SI7404DN-T1-E3 Vishay Siliconix MOSFET N-CH 30V 8.5A PPAK 1212-8
SI7404DN-T1-GE3 SI7404DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8.5A PPAK 1212-8
SI7407DN-T1-E3 SI7407DN-T1-E3 Vishay Siliconix MOSFET P-CH 12V 9.9A PPAK 1212-8
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