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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4322DY-T1-GE3 SI4322DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 18A 8-SOIC
SI4324DY-T1-E3 SI4324DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 36A 8-SOIC
SI4324DY-T1-GE3 SI4324DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 36A 8-SOIC
SI4354DY-T1-E3 SI4354DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 9.5A 8-SOIC
SI4354DY-T1-GE3 SI4354DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9.5A 8-SOIC
SI4362BDY-T1-E3 SI4362BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 29A 8-SOIC
SI4362BDY-T1-GE3 SI4362BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 29A 8-SOIC
SI4401DY-T1-GE3 SI4401DY-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 8.7A 8-SOIC
SI4404DY-T1-GE3 SI4404DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 15A 8-SOIC
SI4409DY-T1-E3 SI4409DY-T1-E3 Vishay Siliconix MOSFET P-CH 150V 1.3A 8-SOIC
SI4411DY-T1-E3 SI4411DY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 9A 8-SOIC
SI4411DY-T1-GE3 SI4411DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 9A 8-SOIC
SI4412ADY-T1-GE3 SI4412ADY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 5.8A 8-SOIC
SI4453DY-T1-E3 SI4453DY-T1-E3 Vishay Siliconix MOSFET P-CH 12V 10A 8-SOIC
SI4453DY-T1-GE3 SI4453DY-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 10A 8-SOIC
SI4462DY-T1-GE3 SI4462DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 1.15A 8-SOIC
SI4466DY-T1-GE3 SI4466DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 9.5A 8-SOIC
SI4483EDY-T1-GE3 SI4483EDY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 10A 8-SOIC
SI4486EY-T1-GE3 SI4486EY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 5.4A 8-SOIC
SI4493DY-T1-E3 SI4493DY-T1-E3 Vishay Siliconix MOSFET P-CH 20V 10A 8SOIC
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