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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4886DY-T1-GE3 SI4886DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9.5A 8-SOIC
SI4888DY-T1-GE3 SI4888DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4892DY-T1-E3 SI4892DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 8.8A 8-SOIC
SI4892DY-T1-GE3 SI4892DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8.8A 8-SOIC
SI5401DC-T1-GE3 SI5401DC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 5.2A 1206-8
SI5402DC-T1-E3 SI5402DC-T1-E3 Vishay Siliconix MOSFET N-CH 30V 4.9A 1206-8
SI5402DC-T1-GE3 SI5402DC-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 4.9A 1206-8
SI5406DC-T1-GE3 SI5406DC-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 6.9A 1206-8
SI5441DC-T1-E3 SI5441DC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.9A 1206-8
SI5441DC-T1-GE3 SI5441DC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.9A 1206-8
SI5445BDC-T1-GE3 SI5445BDC-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 5.2A 1206-8
SI5449DC-T1-E3 SI5449DC-T1-E3 Vishay Siliconix MOSFET P-CH 30V 3.1A 1206-8
SI5449DC-T1-GE3 SI5449DC-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 3.1A 1206-8
SI5461EDC-T1-E3 SI5461EDC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 4.5A CHIPFET
SI5461EDC-T1-GE3 SI5461EDC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.5A CHIPFET
SI5463EDC-T1-GE3 SI5463EDC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.8A 1206-8
SI5473DC-T1-GE3 SI5473DC-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 5.9A 1206-8
SI5475DC-T1-E3 SI5475DC-T1-E3 Vishay Siliconix MOSFET P-CH 12V 5.5A 1206-8
SI5475DC-T1-GE3 SI5475DC-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 5.5A 1206-8
SI6404DQ-T1-E3 SI6404DQ-T1-E3 Vishay Siliconix MOSFET N-CH 30V 8.6A 8TSSOP
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