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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI1073X-T1-E3 SI1073X-T1-E3 Vishay Siliconix MOSFET P-CH 30V 0.98A SC89-6
SI1303DL-T1-GE3 SI1303DL-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 670MA SOT323-3
SI1305EDL-T1-GE3 SI1305EDL-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 0.86A SOT323-3
SI1307DL-T1-GE3 SI1307DL-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 0.85A SOT323-3
SI1402DH-T1-E3 SI1402DH-T1-E3 Vishay Siliconix MOSFET N-CH 30V 2.7A SOT363
SI1402DH-T1-GE3 SI1402DH-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.7A SOT363
SI1405BDH-T1-E3 SI1405BDH-T1-E3 Vishay Siliconix MOSFET P-CH 8V 1.6A SOT363
SI1405DL-T1-GE3 SI1405DL-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 1.6A SC-70-6
SI1413DH-T1-E3 SI1413DH-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.3A SC-70-6
SI1413DH-T1-GE3 SI1413DH-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.3A SC-70-6
SI1433DH-T1-GE3 SI1433DH-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 1.9A SC70-6
SI1450DH-T1-GE3 SI1450DH-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 4.53A SC70-6
SI2311DS-T1-E3 SI2311DS-T1-E3 Vishay Siliconix MOSFET P-CH 8V 3A SOT23
SI2311DS-T1-GE3 SI2311DS-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 3A SOT23
SI2321DS-T1-E3 SI2321DS-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.9A SOT-23
SI2321DS-T1-GE3 SI2321DS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.9A SOT-23
SI2331DS-T1-E3 SI2331DS-T1-E3 Vishay Siliconix MOSFET P-CH 12V 3.2A SOT23-3
SI2331DS-T1-GE3 SI2331DS-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 3.2A SOT23-3
SI3424DV-T1-GE3 SI3424DV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 5A 6-TSOP
SI3433BDV-T1-GE3 SI3433BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.3A 6-TSOP
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