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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI1417EDH-T1-GE3 SI1417EDH-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 2.7A SC-70-6
SI4004DY-T1-GE3 SI4004DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 12A 8-SOIC
SI4004DY-T1-GE3 SI4004DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 12A 8-SOIC
SI4190DY-T1-GE3 SI4190DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 20A 8-SOIC
SI4190DY-T1-GE3 SI4190DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 20A 8-SOIC
SI4403BDY-T1-GE3 SI4403BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 7.3A 8SOIC
SI4403BDY-T1-GE3 SI4403BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 7.3A 8SOIC
SI4403BDY-T1-GE3 SI4403BDY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 7.3A 8SOIC
SI4409DY-T1-GE3 SI4409DY-T1-GE3 Vishay Siliconix MOSFET P-CH 150V 1.3A 8-SOIC
SI4409DY-T1-GE3 SI4409DY-T1-GE3 Vishay Siliconix MOSFET P-CH 150V 1.3A 8-SOIC
SI4409DY-T1-GE3 SI4409DY-T1-GE3 Vishay Siliconix MOSFET P-CH 150V 1.3A 8-SOIC
SI4418DY-T1-GE3 SI4418DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 2.3A 8-SOIC
SI4418DY-T1-GE3 SI4418DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 2.3A 8-SOIC
SI4418DY-T1-GE3 SI4418DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 2.3A 8-SOIC
SI4446DY-T1-GE3 SI4446DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 3.9A 8-SOIC
SI4446DY-T1-GE3 SI4446DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 3.9A 8-SOIC
SI4446DY-T1-GE3 SI4446DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 3.9A 8-SOIC
SI4470EY-T1-GE3 SI4470EY-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 9A 8-SOIC
SI4470EY-T1-GE3 SI4470EY-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 9A 8-SOIC
SI4470EY-T1-GE3 SI4470EY-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 9A 8-SOIC
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