中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 10291030103110321033103410351036103710381039 1054
PDF 缩略图 器件名称 制造商 描述
SI1067X-T1-GE3 SI1067X-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1.06A SC89-6
SI4398DY-T1-GE3 SI4398DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 19A 8-SOIC
SI1046R-T1-GE3 SI1046R-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 0.606A SC75-3
SI1046R-T1-GE3 SI1046R-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 0.606A SC75-3
SI1046R-T1-GE3 SI1046R-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 0.606A SC75-3
SI1046X-T1-GE3 SI1046X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 0.606A SC89-3
SI1046X-T1-GE3 SI1046X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 0.606A SC89-3
SI1046X-T1-GE3 SI1046X-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 0.606A SC89-3
SI1051X-T1-GE3 SI1051X-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 1.2A SC89-6
SI1051X-T1-GE3 SI1051X-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 1.2A SC89-6
SI1051X-T1-GE3 SI1051X-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 1.2A SC89-6
SI1054X-T1-GE3 SI1054X-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 1.32A SC89-6
SI1054X-T1-GE3 SI1054X-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 1.32A SC89-6
SI1054X-T1-GE3 SI1054X-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 1.32A SC89-6
SI1073X-T1-GE3 SI1073X-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 0.98A SC89-6
SI1073X-T1-GE3 SI1073X-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 0.98A SC89-6
SI1073X-T1-GE3 SI1073X-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 0.98A SC89-6
SI2305ADS-T1-GE3 SI2305ADS-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 5.4A SOT23-3
SI2305ADS-T1-GE3 SI2305ADS-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 5.4A SOT23-3
SI2305ADS-T1-GE3 SI2305ADS-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 5.4A SOT23-3
1... 10291030103110321033103410351036103710381039 1054