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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI5447DC-T1-E3 SI5447DC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.5A 1206-8
SI5463EDC-T1-E3 SI5463EDC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.8A 1206-8
SI5463EDC-T1-E3 SI5463EDC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.8A 1206-8
SI5463EDC-T1-E3 SI5463EDC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.8A 1206-8
SI5473DC-T1-E3 SI5473DC-T1-E3 Vishay Siliconix MOSFET P-CH 12V 5.9A 1206-8
SI5473DC-T1-E3 SI5473DC-T1-E3 Vishay Siliconix MOSFET P-CH 12V 5.9A 1206-8
SI5473DC-T1-E3 SI5473DC-T1-E3 Vishay Siliconix MOSFET P-CH 12V 5.9A 1206-8
SI5499DC-T1-E3 SI5499DC-T1-E3 Vishay Siliconix MOSFET P-CH 8V 6A 1206-8
SI5499DC-T1-E3 SI5499DC-T1-E3 Vishay Siliconix MOSFET P-CH 8V 6A 1206-8
SI5499DC-T1-E3 SI5499DC-T1-E3 Vishay Siliconix MOSFET P-CH 8V 6A 1206-8
SI5853DC-T1-E3 SI5853DC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.7A 1206-8
SI5853DC-T1-E3 SI5853DC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.7A 1206-8
SI5853DC-T1-E3 SI5853DC-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.7A 1206-8
SI5856DC-T1-E3 SI5856DC-T1-E3 Vishay Siliconix MOSFET N-CH 20V 4.4A 1206-8
SI5856DC-T1-E3 SI5856DC-T1-E3 Vishay Siliconix MOSFET N-CH 20V 4.4A 1206-8
SI5856DC-T1-E3 SI5856DC-T1-E3 Vishay Siliconix MOSFET N-CH 20V 4.4A 1206-8
SI6410DQ-T1-E3 SI6410DQ-T1-E3 Vishay Siliconix MOSFET N-CH 30V 7.8A 8-TSSOP
SI6410DQ-T1-E3 SI6410DQ-T1-E3 Vishay Siliconix MOSFET N-CH 30V 7.8A 8-TSSOP
SI6410DQ-T1-E3 SI6410DQ-T1-E3 Vishay Siliconix MOSFET N-CH 30V 7.8A 8-TSSOP
SI6433BDQ-T1-E3 SI6433BDQ-T1-E3 Vishay Siliconix MOSFET P-CH 12V 4A 8-TSSOP
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