中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 10271028102910301031103210331034103510361037 1054
PDF 缩略图 器件名称 制造商 描述
SI7491DP-T1-E3 SI7491DP-T1-E3 Vishay Siliconix MOSFET P-CH 30V 11A PPAK SO-8
SI7491DP-T1-E3 SI7491DP-T1-E3 Vishay Siliconix MOSFET P-CH 30V 11A PPAK SO-8
SI7802DN-T1-E3 SI7802DN-T1-E3 Vishay Siliconix MOSFET N-CH 250V 1.24A 1212-8
SI7802DN-T1-E3 SI7802DN-T1-E3 Vishay Siliconix MOSFET N-CH 250V 1.24A 1212-8
SI7802DN-T1-E3 SI7802DN-T1-E3 Vishay Siliconix MOSFET N-CH 250V 1.24A 1212-8
SI7848DP-T1-E3 SI7848DP-T1-E3 Vishay Siliconix MOSFET N-CH 40V 10.4A PPAK SO-8
SI7848DP-T1-E3 SI7848DP-T1-E3 Vishay Siliconix MOSFET N-CH 40V 10.4A PPAK SO-8
SI7848DP-T1-E3 SI7848DP-T1-E3 Vishay Siliconix MOSFET N-CH 40V 10.4A PPAK SO-8
SI8402DB-T1-E1 SI8402DB-T1-E1 Vishay Siliconix MOSFET N-CH 20V 5.3A 2X2 4-MFP
SI8402DB-T1-E1 SI8402DB-T1-E1 Vishay Siliconix MOSFET N-CH 20V 5.3A 2X2 4-MFP
SI8404DB-T1-E1 SI8404DB-T1-E1 Vishay Siliconix MOSFET N-CH 8V 12.2A 2X2 4-MFP
SI8404DB-T1-E1 SI8404DB-T1-E1 Vishay Siliconix MOSFET N-CH 8V 12.2A 2X2 4-MFP
SI8404DB-T1-E1 SI8404DB-T1-E1 Vishay Siliconix MOSFET N-CH 8V 12.2A 2X2 4-MFP
SI8405DB-T1-E1 SI8405DB-T1-E1 Vishay Siliconix MOSFET P-CH 12V 3.6A 2X2 4-MFP
SI8405DB-T1-E1 SI8405DB-T1-E1 Vishay Siliconix MOSFET P-CH 12V 3.6A 2X2 4-MFP
SI8405DB-T1-E1 SI8405DB-T1-E1 Vishay Siliconix MOSFET P-CH 12V 3.6A 2X2 4-MFP
SI8407DB-T2-E1 SI8407DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V 5.8A 2X2 6-MFP
SI8407DB-T2-E1 SI8407DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V 5.8A 2X2 6-MFP
SI8407DB-T2-E1 SI8407DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V 5.8A 2X2 6-MFP
SI8424DB-T1-E1 SI8424DB-T1-E1 Vishay Siliconix MOSFET N-CH 8V 12.2A 2X2 4-MFP
1... 10271028102910301031103210331034103510361037 1054