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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
2N4117A 2N4117A Fairchild/Minco Technology Labs LLC DIE MOSFET N-CH 40V
BSS138 BSS138 Fairchild/Minco Technology Labs LLC DIE MOSFET N-CH 50V LL
BSS84 BSS84 Fairchild/Minco Technology Labs LLC DIE TRANS P-CH SMALL SIGNAL
FQ7N10 FQ7N10 Fairchild/Minco Technology Labs LLC DIE MOSFET N-CH 100V
PCF6680AS PCF6680AS Fairchild/Minco Technology Labs LLC DIE TRANS MOSFET N-CH 30V
PCFQ5P10W PCFQ5P10W Fairchild/Minco Technology Labs LLC DIE MOSFET P-CH 100V
PCFQ8P10W PCFQ8P10W Fairchild/Minco Technology Labs LLC DIE MOSFET P-CH 100V
PCFQ17P10W PCFQ17P10W Fairchild/Minco Technology Labs LLC DIE MOSFET P-CH 100V
PCFD18N20W PCFD18N20W Fairchild/Minco Technology Labs LLC DIE MOSFET N-CH 200V UNIFET
PCFD045N10AW PCFD045N10AW Fairchild/Minco Technology Labs LLC DIE MOSFET N-CH 100V
A2T21H100-25SR3 A2T21H100-25SR3 Freescale Semiconductor IC RF LDMOS TRANS CELL
AFT26P100-4WGSR3 AFT26P100-4WGSR3 Freescale Semiconductor TRANS RF 2.6GHZ 100W NI780S-6
AFT09S200W02SR3 AFT09S200W02SR3 Freescale Semiconductor TRANSISTOR RF LDMOS 4W PLD
GA03JT12-247 GA03JT12-247 GeneSiC Semiconductor TRANS SJT 1200V 3A TO-247AB
GA10JT12-247 GA10JT12-247 GeneSiC Semiconductor TRANS SJT 1.2KV 10A
GA08JT17-247 GA08JT17-247 GeneSiC Semiconductor TRANS SJT 1700V 8A TO-247AB
GA50JT17-247 GA50JT17-247 GeneSiC Semiconductor TRANS SJT 1.7KV 100A
GA04JT17-247 GA04JT17-247 GeneSiC Semiconductor TRANS SJT 1700V 4A TO-247AB
GA06JT12-247 GA06JT12-247 GeneSiC Semiconductor TRANS SJT 1200V 6A TO-247AB
GA16JT17-247 GA16JT17-247 GeneSiC Semiconductor TRANS SJT 1700V 16A TO-247AB
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