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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXMN6A25KTC ZXMN6A25KTC Diodes Incorporated MOSFET N-CH 60V DPAK
ZXMN6A25KTC ZXMN6A25KTC Diodes Incorporated MOSFET N-CH 60V DPAK
2N7002A-7 2N7002A-7 Diodes Incorporated MOSFET N-CH 60V 0.18A SOT23
2N7002A-7 2N7002A-7 Diodes Incorporated MOSFET N-CH 60V 0.18A SOT23
2N7002A-7 2N7002A-7 Diodes Incorporated MOSFET N-CH 60V 0.18A SOT23
ZXMN6A25GTA ZXMN6A25GTA Diodes Incorporated MOSFET N-CH 60V SOT223
ZXMN6A25GTA ZXMN6A25GTA Diodes Incorporated MOSFET N-CH 60V SOT223
ZXMN6A25GTA ZXMN6A25GTA Diodes Incorporated MOSFET N-CH 60V SOT223
ZVP2106GTA ZVP2106GTA Diodes Incorporated MOSFET P-CH 60V 450MA SOT223
ZVP2106GTA ZVP2106GTA Diodes Incorporated MOSFET P-CH 60V 450MA SOT223
ZVP2106GTA ZVP2106GTA Diodes Incorporated MOSFET P-CH 60V 450MA SOT223
ZVP2110GTA ZVP2110GTA Diodes Incorporated MOSFET P-CH 100V 0.31A SOT223
ZVP2110GTA ZVP2110GTA Diodes Incorporated MOSFET P-CH 100V 0.31A SOT223
ZVP2110GTA ZVP2110GTA Diodes Incorporated MOSFET P-CH 100V 0.31A SOT223
DMP2100U-7 DMP2100U-7 Diodes Incorporated MOSFET P CH 20V 4.3A SOT23
DMP2100U-7 DMP2100U-7 Diodes Incorporated MOSFET P CH 20V 4.3A SOT23
DMP2100U-7 DMP2100U-7 Diodes Incorporated MOSFET P CH 20V 4.3A SOT23
ZVN4424GTA ZVN4424GTA Diodes Incorporated MOSFET N-CH 240V 500MA SOT223
ZVN4424GTA ZVN4424GTA Diodes Incorporated MOSFET N-CH 240V 500MA SOT223
ZVN4424GTA ZVN4424GTA Diodes Incorporated MOSFET N-CH 240V 500MA SOT223
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