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厂商 包装系列FET类型FET功能漏源极电压（Vdss）电流-连续漏极（Id）（25°C时）不同Id，Vgs时的RdsOn（最大值）不同Id时的Vgs（th）（最大值）不同Vgs时的栅极电荷（Qg）不同Vds时的输入电容（Ciss）功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXMN0545G4TA ZXMN0545G4TA Diodes Incorporated MOSFET N-CH 450V 140MA SOT-223
ZXMN0545G4TA ZXMN0545G4TA Diodes Incorporated MOSFET N-CH 450V 140MA SOT-223
ZXMN0545G4TA ZXMN0545G4TA Diodes Incorporated MOSFET N-CH 450V 140MA SOT-223
ZVP4424GTA ZVP4424GTA Diodes Incorporated MOSFET P-CH 240V 0.48A SOT223
ZVP4424GTA ZVP4424GTA Diodes Incorporated MOSFET P-CH 240V 0.48A SOT223
ZXMN2A01FTA ZXMN2A01FTA Diodes Incorporated MOSFET N-CH 20V 1.9A SOT23-3
ZXMN2A01FTA ZXMN2A01FTA Diodes Incorporated MOSFET N-CH 20V 1.9A SOT23-3
ZXMN2A01FTA ZXMN2A01FTA Diodes Incorporated MOSFET N-CH 20V 1.9A SOT23-3
ZXMN10A25GTA ZXMN10A25GTA Diodes Incorporated MOSFET N-CH 100V 2.9A SOT223
ZXMN10A25GTA ZXMN10A25GTA Diodes Incorporated MOSFET N-CH 100V 2.9A SOT223
ZXMN10A25GTA ZXMN10A25GTA Diodes Incorporated MOSFET N-CH 100V 2.9A SOT223
ZXMN6A09GTA ZXMN6A09GTA Diodes Incorporated MOSFET N-CH 60V 6.9A SOT223
ZXMN6A09GTA ZXMN6A09GTA Diodes Incorporated MOSFET N-CH 60V 6.9A SOT223
ZXMP4A16GTA ZXMP4A16GTA Diodes Incorporated MOSFET P-CH 40V 6.4A SOT223
ZXMP4A16GTA ZXMP4A16GTA Diodes Incorporated MOSFET P-CH 40V 6.4A SOT223
ZXMP4A16GTA ZXMP4A16GTA Diodes Incorporated MOSFET P-CH 40V 6.4A SOT223
BSS123W-7-F BSS123W-7-F Diodes Incorporated MOSFET N-CH 100V 170MA SC70-3
BSS123W-7-F BSS123W-7-F Diodes Incorporated MOSFET N-CH 100V 170MA SC70-3
BSS123W-7-F BSS123W-7-F Diodes Incorporated MOSFET N-CH 100V 170MA SC70-3
DMN2004K-7 DMN2004K-7 Diodes Incorporated MOSFET N-CH 20V 540MA SOT23-3
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