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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN5L06WK-7 DMN5L06WK-7 Diodes Incorporated MOSFET N-CH 50V 300MA SC70-3
DMP2160U-7 DMP2160U-7 Diodes Incorporated MOSFET P-CH 20V 3.2A SOT-23
DMP2160U-7 DMP2160U-7 Diodes Incorporated MOSFET P-CH 20V 3.2A SOT-23
DMP2160U-7 DMP2160U-7 Diodes Incorporated MOSFET P-CH 20V 3.2A SOT-23
DMN601TK-7 DMN601TK-7 Diodes Incorporated MOSFET N-CH 60V 300MA SOT-523
DMN601TK-7 DMN601TK-7 Diodes Incorporated MOSFET N-CH 60V 300MA SOT-523
DMN601TK-7 DMN601TK-7 Diodes Incorporated MOSFET N-CH 60V 300MA SOT-523
DMN3018SSS-13 DMN3018SSS-13 Diodes Incorporated MOSFET N CH 30V 7.3A SO-8
DMN3018SSS-13 DMN3018SSS-13 Diodes Incorporated MOSFET N CH 30V 7.3A SO-8
DMN3018SSS-13 DMN3018SSS-13 Diodes Incorporated MOSFET N CH 30V 7.3A SO-8
DMP31D0UFB4-7B DMP31D0UFB4-7B Diodes Incorporated MOSFET P-CH 30V 540MA 3DFN
DMP31D0UFB4-7B DMP31D0UFB4-7B Diodes Incorporated MOSFET P-CH 30V 540MA 3DFN
DMP31D0UFB4-7B DMP31D0UFB4-7B Diodes Incorporated MOSFET P-CH 30V 540MA 3DFN
DMN2990UFA-7B DMN2990UFA-7B Diodes Incorporated MOSFET N-CH 20V 0.51A
DMN2990UFA-7B DMN2990UFA-7B Diodes Incorporated MOSFET N-CH 20V 0.51A
DMN2990UFA-7B DMN2990UFA-7B Diodes Incorporated MOSFET N-CH 20V 0.51A
DMP22D4UFA-7B DMP22D4UFA-7B Diodes Incorporated MOSFET P-CH 20V 0.33A
DMP22D4UFA-7B DMP22D4UFA-7B Diodes Incorporated MOSFET P-CH 20V 0.33A
DMP22D4UFA-7B DMP22D4UFA-7B Diodes Incorporated MOSFET P-CH 20V 0.33A
DMP2240UW-7 DMP2240UW-7 Diodes Incorporated MOSFET P-CH 20V 1.5A SC70-3
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