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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN66D0LT-7 DMN66D0LT-7 Diodes Incorporated MOSFET N-CH 60V 115MA SOT-523
DMG3415UFY4-7 DMG3415UFY4-7 Diodes Incorporated MOSFET P-CH 16V 2.5A DFN-3
DMG3415UFY4-7 DMG3415UFY4-7 Diodes Incorporated MOSFET P-CH 16V 2.5A DFN-3
DMG3415UFY4-7 DMG3415UFY4-7 Diodes Incorporated MOSFET P-CH 16V 2.5A DFN-3
DMN66D0LT-7 DMN66D0LT-7 Diodes Incorporated MOSFET N-CH 60V 115MA SOT-523
DMN66D0LT-7 DMN66D0LT-7 Diodes Incorporated MOSFET N-CH 60V 115MA SOT-523
DMN66D0LT-7 DMN66D0LT-7 Diodes Incorporated MOSFET N-CH 60V 115MA SOT-523
DMN4800LSSL-13 DMN4800LSSL-13 Diodes Incorporated MOSFET N-CH 30V 8A SO-8
DMN4800LSSL-13 DMN4800LSSL-13 Diodes Incorporated MOSFET N-CH 30V 8A SO-8
DMN4800LSSL-13 DMN4800LSSL-13 Diodes Incorporated MOSFET N-CH 30V 8A SO-8
DMN2230U-7 DMN2230U-7 Diodes Incorporated MOSFET N-CH 20V 2A SOT23-3
DMN2230U-7 DMN2230U-7 Diodes Incorporated MOSFET N-CH 20V 2A SOT23-3
DMN2230U-7 DMN2230U-7 Diodes Incorporated MOSFET N-CH 20V 2A SOT23-3
DMN3033LSN-7 DMN3033LSN-7 Diodes Incorporated MOSFET N-CH 30V 6A SC59-3
DMN3033LSN-7 DMN3033LSN-7 Diodes Incorporated MOSFET N-CH 30V 6A SC59-3
DMN3033LSN-7 DMN3033LSN-7 Diodes Incorporated MOSFET N-CH 30V 6A SC59-3
DMN2015UFDE-7 DMN2015UFDE-7 Diodes Incorporated MOSFET N-CH 20V 10.5A U-DFN
DMN2015UFDE-7 DMN2015UFDE-7 Diodes Incorporated MOSFET N-CH 20V 10.5A U-DFN
DMN2015UFDE-7 DMN2015UFDE-7 Diodes Incorporated MOSFET N-CH 20V 10.5A U-DFN
DMP4047LFDE-7 DMP4047LFDE-7 Diodes Incorporated MOSFET P-CH 40V 3.3A U-DFN2020
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