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厂商 包装系列FET类型FET功能漏源极电压（Vdss）电流-连续漏极（Id）（25°C时）不同Id，Vgs时的RdsOn（最大值）不同Id时的Vgs（th）（最大值）不同Vgs时的栅极电荷（Qg）不同Vds时的输入电容（Ciss）功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZVP3310FTA ZVP3310FTA Diodes Incorporated MOSFET P-CH 100V 0.075A SOT23-3
ZVN4206A ZVN4206A Diodes Incorporated MOSFET N-CH 60V 600MA TO92-3
ZXMP10A18GTA ZXMP10A18GTA Diodes Incorporated MOSFET P-CH 100V 2.6A SOT223
ZXMP10A18GTA ZXMP10A18GTA Diodes Incorporated MOSFET P-CH 100V 2.6A SOT223
ZXMP10A18GTA ZXMP10A18GTA Diodes Incorporated MOSFET P-CH 100V 2.6A SOT223
ZXMP6A18KTC ZXMP6A18KTC Diodes Incorporated MOSFET P-CH 60V 6.8A DPAK
ZXMP6A18KTC ZXMP6A18KTC Diodes Incorporated MOSFET P-CH 60V 6.8A DPAK
ZXMP6A18KTC ZXMP6A18KTC Diodes Incorporated MOSFET P-CH 60V 6.8A DPAK
BS250P BS250P Diodes Incorporated MOSFET P-CH 45V 230MA TO92-3
ZVP2106A ZVP2106A Diodes Incorporated MOSFET P-CH 60V 280MA TO92-3
ZVN4424A ZVN4424A Diodes Incorporated MOSFET N-CH 240V 260MA TO92-3
ZXM66P03N8TA ZXM66P03N8TA Diodes Incorporated MOSFET P-CH 30V 7.9A 8-SOIC
ZXM66P03N8TA ZXM66P03N8TA Diodes Incorporated MOSFET P-CH 30V 7.9A 8-SOIC
DMP21D5UFB4-7B DMP21D5UFB4-7B Diodes Incorporated MOSFET P-CH 20V 700MA 3DFN
DMP21D5UFB4-7B DMP21D5UFB4-7B Diodes Incorporated MOSFET P-CH 20V 700MA 3DFN
DMP21D5UFB4-7B DMP21D5UFB4-7B Diodes Incorporated MOSFET P-CH 20V 700MA 3DFN
DMN55D0UT-7 DMN55D0UT-7 Diodes Incorporated MOSFET N-CH 50V 160MA SOT-523
DMN55D0UT-7 DMN55D0UT-7 Diodes Incorporated MOSFET N-CH 50V 160MA SOT-523
DMN55D0UT-7 DMN55D0UT-7 Diodes Incorporated MOSFET N-CH 50V 160MA SOT-523
BS870-7-F BS870-7-F Diodes Incorporated MOSFET N-CH 60V 0.25A SOT23-3
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