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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMP2240UW-7 DMP2240UW-7 Diodes Incorporated MOSFET P-CH 20V 1.5A SC70-3
DMP2240UW-7 DMP2240UW-7 Diodes Incorporated MOSFET P-CH 20V 1.5A SC70-3
DMP2035UVT-7 DMP2035UVT-7 Diodes Incorporated MOSFET P-CH 20V 6A TSOT26
DMP2035UVT-7 DMP2035UVT-7 Diodes Incorporated MOSFET P-CH 20V 6A TSOT26
DMP2035UVT-7 DMP2035UVT-7 Diodes Incorporated MOSFET P-CH 20V 6A TSOT26
DMN3051L-7 DMN3051L-7 Diodes Incorporated MOSFET N-CH 30V 5.8A SOT23-3
DMN3051L-7 DMN3051L-7 Diodes Incorporated MOSFET N-CH 30V 5.8A SOT23-3
DMN3051L-7 DMN3051L-7 Diodes Incorporated MOSFET N-CH 30V 5.8A SOT23-3
DMS3015SSS-13 DMS3015SSS-13 Diodes Incorporated MOSFET N-CH 30V 11A 8SO
DMS3015SSS-13 DMS3015SSS-13 Diodes Incorporated MOSFET N-CH 30V 11A 8SO
DMS3015SSS-13 DMS3015SSS-13 Diodes Incorporated MOSFET N-CH 30V 11A 8SO
DMP3028LFDE-7 DMP3028LFDE-7 Diodes Incorporated MOSFET P-CH 30V 6.8A U-DFN2020-6
DMP3028LFDE-7 DMP3028LFDE-7 Diodes Incorporated MOSFET P-CH 30V 6.8A U-DFN2020-6
DMP3028LFDE-7 DMP3028LFDE-7 Diodes Incorporated MOSFET P-CH 30V 6.8A U-DFN2020-6
DMN2005K-7 DMN2005K-7 Diodes Incorporated MOSFET N-CH 20V 300MA SOT23-3
DMN2005K-7 DMN2005K-7 Diodes Incorporated MOSFET N-CH 20V 300MA SOT23-3
DMN2005K-7 DMN2005K-7 Diodes Incorporated MOSFET N-CH 20V 300MA SOT23-3
DMG3415UFY4-7 DMG3415UFY4-7 Diodes Incorporated MOSFET P-CH 16V 2.5A DFN-3
DMG3415UFY4-7 DMG3415UFY4-7 Diodes Incorporated MOSFET P-CH 16V 2.5A DFN-3
DMG3415UFY4-7 DMG3415UFY4-7 Diodes Incorporated MOSFET P-CH 16V 2.5A DFN-3
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