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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ALD114804PCL ALD114804PCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16DIP
ALD210802PCL ALD210802PCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16DIP
ALD210802SCL ALD210802SCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16SOIC
ALD210804PCL ALD210804PCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16DIP
ALD210804SCL ALD210804SCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16SOIC
ALD210814PCL ALD210814PCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16DIP
ALD210814SCL ALD210814SCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16SOIC
ALD212908APAL ALD212908APAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8DIP
ALD212908ASAL ALD212908ASAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8SOIC
ALD110808PCL ALD110808PCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16DIP
ALD212900ASAL ALD212900ASAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8SOIC
ALD210808PCL ALD210808PCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16DIP
ALD210808SCL ALD210808SCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16SOIC
ALD212914PAL ALD212914PAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8DIP
ALD212914SAL ALD212914SAL Advanced Linear Devices Inc MOSFET 2N-CH 10.6V 0.08A 8SOIC
ALD210800PCL ALD210800PCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 0.08A 16DIP
ALD110808SCL ALD110808SCL Advanced Linear Devices Inc MOSFET 4N-CH 10.6V 16SOIC
ALD1110EPAL ALD1110EPAL Advanced Linear Devices Inc MOSFET 2N-CH 10V 8DIP
ALD1110ESAL ALD1110ESAL Advanced Linear Devices Inc MOSFET 2N-CH 10V 8SOIC
ALD1108ESCL ALD1108ESCL Advanced Linear Devices Inc MOSFET 4N-CH 10V 16SOIC
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