中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 209210211212213214215216217218219 274
PDF 缩略图 器件名称 制造商 描述
SIA533EDJ-T1-GE3 SIA533EDJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC70-6
SIA517DJ-T1-GE3 SIA517DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC-70-6
SIA517DJ-T1-GE3 SIA517DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC-70-6
SIA517DJ-T1-GE3 SIA517DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC-70-6
SIA910EDJ-T1-GE3 SIA910EDJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 12V 4.5A SC-70-6
SIA910EDJ-T1-GE3 SIA910EDJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 12V 4.5A SC-70-6
SIA910EDJ-T1-GE3 SIA910EDJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 12V 4.5A SC-70-6
SI3932DV-T1-GE3 SI3932DV-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 3.7A 6-TSOP
SI3932DV-T1-GE3 SI3932DV-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 3.7A 6-TSOP
SI3932DV-T1-GE3 SI3932DV-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 3.7A 6-TSOP
SI3590DV-T1-E3 SI3590DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 2.5A 6TSOP
SI3590DV-T1-E3 SI3590DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 2.5A 6TSOP
SI3590DV-T1-E3 SI3590DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 2.5A 6TSOP
SI3900DV-T1-E3 SI3900DV-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 2A 6-TSOP
SI3900DV-T1-E3 SI3900DV-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 2A 6-TSOP
SI3900DV-T1-E3 SI3900DV-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 2A 6-TSOP
SI9933CDY-T1-GE3 SI9933CDY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4A 8-SOIC
SI9933CDY-T1-GE3 SI9933CDY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4A 8-SOIC
SI9933CDY-T1-GE3 SI9933CDY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4A 8-SOIC
SIA975DJ-T1-GE3 SIA975DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.5A SC-70-6
1... 209210211212213214215216217218219 274